Allicdata Part #: | 1465-1084-ND |
Manufacturer Part#: |
MAGX-000912-500L00 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | FETS RF GAN 500W 960-1215MHZ |
More Detail: | RF Mosfet HEMT 50V 400mA 960MHz ~ 1.215GHz 20.5dB ... |
DataSheet: | MAGX-000912-500L00 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | HEMT |
Frequency: | 960MHz ~ 1.215GHz |
Gain: | 20.5dB |
Voltage - Test: | 50V |
Current Rating: | 15.7A |
Noise Figure: | -- |
Current - Test: | 400mA |
Power - Output: | 500W |
Voltage - Rated: | 65V |
Package / Case: | -- |
Supplier Device Package: | -- |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MAGX-000912-500L00 is a type of FET, or field-effect transistor, that is used in radio frequency (RF) applications. It offers exceptional performance in RF circuits, such as RF amplifiers and antennas, with low noise and high power gain.
A FET is a three terminal device consisting of a source, a gate and a drain. The gate is used to control the current flow between the source and the drain, and the voltage between the gate and the source determines the amount of current that can flow through the drain. This type of transistor is often used in situations where a low power signal needs to be amplified, such as in RF applications.
The MAGX-000912-500L00 is a power MOSFET, which means that it can handle a higher current than a normal FET. Its maximum drain-source voltage is 500V, and its power gain is unusually high compared to other MOSFETs. The device can operate at frequencies up to 500MHz, making it an ideal choice for RF applications.
The MAGX-000912-500L00 has an inductive load capability which helps it to maintain stability at high power levels. This makes it particularly suited to applications where low EMI (electromagnetic interference) is required, such as in radio transmitters and receivers. The device also has a low noise figure, which reduces the amount of external noise that can interfere with the signal.
The MAGX-000912-500L00 is also a great choice for low voltage operation. It can operate with a supply voltage as low as 3V, and its high performance at low power ensures that it is suitable for use in portable electronics.
The MAGX-000912-500L00 is a highly reliable MOSFET that can be used in a wide range of RF applications. It offers excellent power gain, low noise and extended reliability, making it an ideal choice for high-performance RF systems.
The specific data is subject to PDF, and the above content is for reference
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MAGX-000912-250L00 | M/A-Com Tech... | 0.0 $ | 1000 | TRANSISTOR GAN 250W 960-1... |
MAGX-000912-500L00 | M/A-Com Tech... | 0.0 $ | 1000 | FETS RF GAN 500W 960-1215... |
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MAGX-001214-250L00 | M/A-Com Tech... | 0.0 $ | 1000 | TRANSISTOR GAN 250W 1.2-1... |
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MAGX-000035-01500S | M/A-Com Tech... | 0.0 $ | 1000 | TRANSISTOR GAN 3.5GHZ 15W... |
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