Allicdata Part #: | MAGX-001090-700L0S-ND |
Manufacturer Part#: |
MAGX-001090-700L0S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | M/A-Com Technology Solutions |
Short Description: | TRANSISTOR RF 700W GAN |
More Detail: | RF Mosfet HEMT 50V 500mA 1.03GHz ~ 1.09GHz 20.5dB ... |
DataSheet: | MAGX-001090-700L0S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | HEMT |
Frequency: | 1.03GHz ~ 1.09GHz |
Gain: | 20.5dB |
Voltage - Test: | 50V |
Current Rating: | 31A |
Noise Figure: | -- |
Current - Test: | 500mA |
Power - Output: | 700W |
Voltage - Rated: | 65V |
Package / Case: | -- |
Supplier Device Package: | -- |
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MAGX-001090-700L0S is a type of transistor that is used in radio frequency (RF) applications. It is classified as a field-effect transistor (FET) and specifically a metal-oxide semiconductor FET (MOSFET). This type of transistor is particularly useful in RF applications because of its low resistance and its ability to operate at higher frequencies than traditional transistors.
The working principle of the MAGX-001090-700L0S is relatively simple. The device can act as a switch (on-off-switch) between two nodes when a voltage is applied. When the voltage is applied, electrons are attracted to the conducting layer in the MOSFET, creating an electron-rich region. This causes the FET to act as an insulator between the two nodes. As the voltage is increased, more electrons fill the conducting layer and the resistance between the two nodes decreases. When the voltage is lowered, the electrons are no longer attracted to the conducting layer, and the resistance between the two nodes increases.
The MAGX-001090-700L0S is most commonly used in radio-frequency (RF) applications, such as cell phone base stations and satellite communications. In these applications, the MOSFET is used to amplify weak signals that would otherwise be lost or degraded by the low noise levels of the environment. The MOSFET acts as an amplifier of the signal, amplifying it to a usable level.
The MAGX-001090-700L0S is also used in high-power applications, such as in power supplies and motors. In these applications, the high resistance of the MOSFET can be used to control the flow of current in the circuit. Since the MOSFET can switch from a high resistance state to a low resistance state, it is ideal for regulating the amount of current in a circuit.
The MAGX-001090-700L0S is also used in low-power applications, such as in radio receivers. In this context, the MOSFET is used to amplify the signal that is being received by the radio receiver. It does this by amplifying the voltage that is applied to it. The amplified signal is then sent to the receiver, allowing the receiver to detect the incoming signal with greater sensitivity.
In summary, the MAGX-001090-700L0S is a MOSFET transistor that is used in RF applications and other high-power, low-power applications. It works by amplifying the applied voltage in order to control the flow of current in the circuit. It is a useful device for many different applications and can be used for a wide range of tasks.
The specific data is subject to PDF, and the above content is for reference
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