Allicdata Part #: | MMBFU310LT1OSCT-ND |
Manufacturer Part#: |
MMBFU310LT1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 0.225W SOT23 |
More Detail: | JFET N-Channel 25V 225mW Surface Mount SOT-23-3 (... |
DataSheet: | MMBFU310LT1 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Drain to Source Voltage (Vdss): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 24mA @ 10V |
Voltage - Cutoff (VGS off) @ Id: | 2.5V @ 1nA |
Input Capacitance (Ciss) (Max) @ Vds: | 5pF @ 10V (VGS) |
Power - Max: | 225mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MBFU310 |
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The MMBFU310LT1 is a part of the field effect transistors (FET) family, specifically part of the junction field effect transistor (JFET) family. This device is used in high frequency circuits, as well as in general amplifying circuits because its structure yields low noise and high accuracy. With this device, electric signals have the ability to pass through with minimal distortion or alteration to the original signal.
The MMBFU310LT1 is composed of an N-channel JFET and is operated in depletion mode. The FET works by the application of a bias voltage to one lead of the gate, while another voltage is applied to the bas. This creates a depletion region around the gate terminal and a conductive channel between the drain and source. This channel allows for electric current between the two terminals, and based on the gate bias and current flowing from drain to source, the resistance of this channel is varied. This change in resistance is what then allows an electronic signal to pass through.
Because the MMBFU310LT1 operates in this manner, it is especially useful in amplifying low level signals. The resistance that is varied by gate bias is adjusted to best suit the needs of the particular signal and allows the signal to travel through in its most accurate form. In addition, the FET requires a much lower power than traditional transistors. This allows for devices such as signal amplifiers to operate for longer periods of time, with minimal power draw. It is also useful in the production of switching supplies and amplifiers in HF and VHF circuits.
Due to the MMBFU310LT1’s low noise and high accuracy, as well as its ability to be adjusted to suit the needs of the particular signal, it is an invaluable component in a variety of industries. Because it requires less power, it is often used in portable electronics such as laptops and mobile phones, but is also found in audio amplifiers, hearing aids, medical equipment and instruments, and even in automotive electronics.
The MMBFU310LT1 combines the advantages of other FET components to create an versatile and reliable device. In its application fields, it is able to provide a range of uses and benefits to the user, while maintaining its high accuracy and low noise. In addition, its low power needs allow it to be suitable in a variety of portable and handheld devices, without the worry of quickly draining the battery. Because of these advantages, the MMBFU310LT1 is an important and popular component within the field of electronics.
The specific data is subject to PDF, and the above content is for reference
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