MMBF2202PT1G Discrete Semiconductor Products

The MMBF2202PT1G is a popular Field-Effect Transistor (FET) that is manufactured by Texas Instruments. It is a Single N-channel FET that is designed to be used in a wide range of applications. The MMBF2202PT1G offers excellent performance, high power savings, and simple installation. It is one of the most widely used FETs for general-purpose applications.

The MMBF2202PT1G can be used in a wide range of applications. These include switching power supplies, automotive control systems, robotics, motor controllers, power audio amplifiers, and video systems. This FET is also used in medical instruments and in industrial automation equipment.

The MMBF2202PT1G has a Drain-Source Current of up to 800mA and a continuous drain current of 182mA. It also has a maximum peak drain current of 1.8A. The maximum Drain-Source voltage rating is 30V. In addition, the MMBF2202PT1G has a break-down voltage (From Drain to Source) of 2V min. and a minimum Rds(on) of 0.2Ω. The maximum Rds(on) is also an impressive 0.7Ω at 25°C.

The working principle of the MMBF2202PT1G FET is based on the phenomenon of majority-carrier injection. When a voltage is applied to the gate of the FET, the current flows from the drain to the source, creating a flow of majority carriers (electron in this case). The amount of current that flows from the drain to the source is determined by the resistance between the drain and the source (Rds(on)). The lower the Rds(on), the higher the current that can flow from the drain to the source.

The MMBF2202PT1G is a versatile device that can be used in a wide range of applications. Its low resistance, high current rating, and wide threshold voltage range make it a desirable choice for many applications. With its impressive features and its user-friendly installation process, the MMBF2202PT1G is an ideal choice for those who need reliable performance from a FET device.