MMBF5457 Discrete Semiconductor Products |
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Allicdata Part #: | MMBF5457TR-ND |
Manufacturer Part#: |
MMBF5457 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 350MW SOT23 |
More Detail: | JFET N-Channel 25V 350mW Surface Mount SOT-23-3 |
DataSheet: | MMBF5457 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 1mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 500mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | 7pF @ 15V |
Power - Max: | 350mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Base Part Number: | MBF5457 |
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The MMBF5457 is a surface mount N-channel Junction Field Effect Transistor (JFET) designed specifically for low voltage, low current analog signal applications. As a JFET, it utilizes a mechanism of controlling current flow through channels between two terminals, the source and the drain, by biasing the gate terminal. It is available in two packages, the SOT-23 and the SOIC-8.
This device is well suited for use in low power Op-Amp circuits, high-impedance buffers-amplifiers, filters, voltage regulators and audio amplifiers. It has a very low input capacitance and a very low input bias current, which is beneficial in analog, linear and digital circuit designs. It is also very versatile as it supports a wide range of applications, including power supply current regulation and protection circuits, signal source conversions and audio amplifiers.
The MMBF5457 is a depletion-mode device, which means that it is normally off, and current only flows when a bias voltage is applied to the gate. The device works by creating an electric field between the gate and the source terminal which attracts electrons towards the gate. When the bias voltage reaches a certain threshold, the electrons are attracted to the gate beyond the point of turn-on. When this happens, a current path is established between the source and drain terminals, allowing a controlled current to flow. The gate voltage can then be used to adjust the current flow, allowing for a very versatile range of applications.
When the bias voltage is removed or reduced, the electrons are repelled back to the source and the current flow stops. This makes the device very useful in precision current regulation, as it is possible to set and control the current without the use of external components. The device is also very durable, with a power dissipation rating of 800mW and an operating temperature range of -55C to +150C.
In summary, the MMBF5457 is a useful and versatile N-channel junction field effect transistor designed for low voltage, low current analog signal applications. It has a low input capacitance and bias current and a wide range of applications, including precision current regulation, protection circuits, signal source conversions and audio amplifiers. The device is also highly durable and is able to operate in extreme temperatures. This makes it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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