Allicdata Part #: | MMBF5484LT1GOSTR-ND |
Manufacturer Part#: |
MMBF5484LT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 25V 0.225W SOT23 |
More Detail: | JFET N-Channel 25V 225mW Surface Mount SOT-23-3 (... |
DataSheet: | MMBF5484LT1G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 25V |
Current - Drain (Idss) @ Vds (Vgs=0): | 1mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 300mV @ 10nA |
Input Capacitance (Ciss) (Max) @ Vds: | 5pF @ 15V |
Power - Max: | 225mW |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MBF5484 |
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The MMBF5484LT1G is a type of junction field effect transistor (JFET). It is specifically designed for low-voltage, high-speed applications, primarily as amplifiers. It is a N-channel type transistor, and it operates in the depletion mode, using reverse bias on the gate terminal. This JFET is available in an SO-8 package, allowing for easy integration in applications where minimal surface area is desired.
The MMBF5484LT1G is constructed from a junction between an N-channel depletion-mode MOSFET and a P-channel depletion mode MOSFET. The junction is the “point” where the gate terminal is connected, and it allows the transistor to control the electrons to flow between the drain and the source. This is the most basic principle of how a JFET works, and the MMBF5484LT1G is no different.
The MMBF5484LT1G is designed for applications with low noise, high gain, and high speed. It is often used as an amplifier in high-frequency applications such as radio frequency applications, as well as medical equipment. It is also well-suited for use in analog-to-digital converters (ADCs), as it can provide low-noise amplification of signals. This JFET also has many other applications, such as in power management, motor control systems, and even in RF communication infrastructure components.
In order for the MMBF5484LT1G to function properly, it must receive power from a voltage source and operating under certain conditions that dictate the operating characteristics. When being used as an amplifier, the drain current will increase or decrease depending on the amount of gate bias being applied. The MMBF5484LT1G has a high input impedance, meaning that it draws very little current from the gate and is therefore very efficient. This is one of the reasons why it excels in high-frequency applications.
The MMBF5484LT1G is an extremely versatile device, and can be used in a wide range of applications. Its ability to provide low-noise amplification and allow for operation at high frequencies make it ideal for many high-speed applications. Its small size and low power consumption also make it a great choice for devices that require minimal space and minimal power.
The specific data is subject to PDF, and the above content is for reference
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