MMBFJ212

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The MMBFJ212 field-effect transistor is a three-terminal, dual-gate, Monolithic Microwave Integrated Circuit (MMIC) device. It is designed for high-power, high-frequency, linear and/or logarithmic amplifiers, particularly in the microwave and millimeter-wave frequency bands. The device is operated based on an innovative, proprietary distributed feedback structure.

The MMBFJ212 has two gates. Gate 1 (G1) works as a control gate, while Gate 2 (G2) works as an outer gate, providing current gain and stability. The MMBFJ212 is designed to be used with a positive control voltage applied to Gate 1. This device is rated to operate over the frequency range of 0.1GHz to 12GHz.

The MMBFJ212 is composed of a pair of complementary polysilicon N- and P-channel metal oxide semiconductor field-effect transistors (NMOSFET and PMOSFET, respectively). It is fabricated using a 0.15µm Gate Length Complementary-on-Insulator (CLCOI) process, allowing it to reach higher frequency operation.

The device is optimized for high-power linear applications. It can achieve a gain of 16dB at 6GHz, with a 3dB bandwidth of 2GHz. It is rated for a minimum output power of 19 dBm, with an output power of +30 dBm achieved at 10GHz. The MMBFJ212 also features an intermodulation distortion (IMD) of -30dBc.

For applications requiring high linearity and low noise, the MMBFJ212 also features a low-noise amplifier (LNA) mode. In this mode, it contributes a noise figure of 1.7dB at 6GHz, with a gain of 15.8dB at 10GHz.

In addition to its linearity, the MMBFJ212 also offers a wide range of gain control. It is rated for a maximum gain control range of up to 20dB. Thus, the device can be used to implement gain control in a wide variety of applications.

The MMBFJ212 also features a built-in voltage-variable capacitor (VVC). This feature enables the device to be tuned within a range of 0.1GHz to 6GHz. The VVC allows for fast and accurate control of the device’s center frequency.

Due to its high linearity, wide gain control range, and low noise figure, the MMBFJ212 is ideal for applications such as microwave transceiver down-converters, CATV amplifiers, WiFi dynamic range and power amplifiers, Digital Radio Frequency (DRF) receivers, mobile radio front-ends, and Automatic Level Control (ALC) circuits.

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