MMBF170Q-7-F Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MMBF170Q-7-F is a metal oxide semiconductor field effect transistor (MOSFET). MOSFETs are typically used for high-frequency and high-speed switching applications in a wide variety of electronic products and circuits. The MMBF170Q-7-F is a single enhancement-mode MOSFET capable of both Analog and digital switching.

The MMBF170Q-7-F is a low-voltage, low-power device with a breakdown voltage of 20V, a gate-source voltage rating of 7V, and a drain-source voltage rating of 25V. The maximum junction temperature rating is 175°C. The maximum Drain to Source on-state resistance is 170 ohms.

MOSFETs are unipolar devices, using only one type of mobile charge carrier (electrons). This makes them powerful switching devices capable of providing fast switching times, high input impedance, and low voltage operation.

The working principle of the MMBF170Q-7-F is based on the four-terminal structure of a MOSFET. The four terminals are the source, the drain, the gate, and the body. When the gate voltage increases, the channel between the source and drain regions becomes more conducting due to an increased number of mobile electrons in the channel. Thus, a higher current (drain current) will be allowed to flow from the source to the drain.

The MMBF170Q-7-F is designed for use in circuits where both digital and analog switching are required. It is an ideal device for use in high-frequency circuits as it can switch rapidly between its on and off states. It is also well-suited for applications requiring high inputs impedance, low power consumption, and fast switching times. The MMBF170Q-7-F is commonly used in gate and level translation applications, as well as in RF switching circuits. It can also be used in low-power switching applications such as motor control, brushless DC motor control, and actuator control.

In summary, the MMBF170Q-7-F is a single enhancement-mode MOSFET capable of providing fast switching times, high input impedance, and low voltage operation. It is designed for use in applications requiring both digital and analog switching, and is well-suited for high-frequency circuits and RF switching applications. It is also ideal for low-power switching applications such as motor control and brushless DC motor control.

The specific data is subject to PDF, and the above content is for reference