MRF5S19130HSR5

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The MRF5S19130HSR5 is a high-power, wide band, two-stage RF power MOSFET from NXP. This device is specifically designed for use as a driver in high-power amplifiers for the emerging 5 GHz wireless local area networking (WLAN) systems.

The MRF5S19130HSR5 is a 28 V, 20.5 W power MOSFET device with an built-in ultra-wide band, two-stage architecture. This device features a high-power, 50 V, 122 A, P-Channel MOSFET with low r_DSon, high F_T and high-frequency capability, and a built-in bias circuitry that utilizes a 28 V, 12 W P-Channel MOSFET. This device is designed for operation in the 3.2 to 5.8 GHz frequency range and is capable of handling a maximum output power of 10 W when used with a single voltage power supply.

The MRF5S19130HSR5 can be used in a wide range of applications requiring high power, wideband operation. Typical applications include WLAN 802.11a/b/g/n, wireless local area net (WLAN) base station, point-to-point wireless bridges, microwave links, wireless infrastructure, cable TV amplifiers, cellular infrastructure and system-on-a-chip (SOC) modules.

The MRF5S19130HSR5 is designed to provide an unmatched performance and efficiency in high-power, wideband applications. The device utilizes an advanced silicon fabrication process and an extremely small die size to enable the highest power and frequency range while maintaining low power consumption. The low r_DSon and high F_T also guarantees superior high-frequency operation while providing a high-quality signal. The MRF5S19130HSR5 also features a built-in temperature protection circuitry that helps to protect the device from over-temperature conditions.

The main working principle behind the MRF5S19130HSR5 device is its two-stage architecture which enables it to provide unparalleled performance in high power, wideband applications. The two-stage architecture consists of a high-power, 50 V, P-Channel MOSFET, and a built-in bias circuitry that utilizes a 28 V, 12 W P-Channel MOSFET. The two-stage architecture allows for the device to provide an extremely high power output, in addition to a wide frequency range operation. The two MOSFETs also act together to keep the voltage and power-handling capability at a minimum, while maximizing the device’s efficiency.

The MRF5S19130HSR5 is designed to provide unmatched performance, efficiency, and reliability in a wide range of high-power, wide band applications. Its advanced silicon fabrication process and ultra-small die size ensures the highest power and frequency range capabilities while maintaining low power consumption. The built-in temperature protection circuitry of the device ensures superior reliability and long-term reliability. The device also features a two-stage architecture that enables it to provide unparalleled performance in high power, wide band applications.

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