MRF5812MR2

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The MRF5812MR2 is a high power, low noise, highly reliable RF transistor. Despite its incredible performance, the device is affordable and offers a high degree of flexibility for a number of applications. The device is used for a wide range of applications, from military to consumer electronics.

The MRF5812MR2 is an NPN silicon-germanium transistor specifically designed for a variety of wireless applications, such as FM broadcast amplifiers, VHF/UHF amplifiers, TTL transmitters, car radio, antenna power amplifiers and other high frequency applications.

The device is based on a bipolar transistor, which is a current-controlled three-terminal device with a base, collector and emitter. As the base-emitter junction is forward biased and the collector-emitter junction is reverse biased, the transistor acts as an amplifier. The amplification factor of the transistor is dependent on the characteristics of the transistor’s base-emitter junction.

The RF transistor has an operating frequency range up to 400 MHz, and can operate with a maximum of 200 volts. It has a power rating of 10W and a maximum collector to emitter voltage of 18V. The device has a relatively low noise figure of –62 dBm under typical operating conditions.

The MRF5812MR2 also has a wide gain bandwidth product of up to 5 GHz. The device has a maximum collector to emitter saturation voltage of 3.2V and a minimum DC current gain of 25dB. The device also has a collector to emitter saturation resistance of 4.5 ohms and a capacitance of 0.7pF.

The MRF5812MR2 has a number of features that make it well suited for use in RF applications. These include stability under changing supply voltages, low noise performance, a high power rating and a wide gain bandwidth. Moreover, the device is relatively easy to use and provides a wide range operating temperature range.

The MRF5812MR2 has a number of uses in the area of RF transistors. The device can be used in cellular telephones and Bluetooth applications, such as VHF/UHF amplifiers, preamplifiers, oscillators and oscillator buffers. It is also used in various radio and TV mast amplifiers and antenna fill amplifiers, as well as radar and communications systems.

The MRF5812MR2 is also used in low power broadcast amplifiers, cordless phones, satellite amplifiers, cable modems, and digital television. Additionally, the device is suitable for use in high frequency switching and amplification applications with high reliability. The device can also be used in medical imaging, such as for MRI scanning.

In conclusion, the MRF5812MR2 is an incredibly versatile device, with a wide range of applications in the area of RF transistors. It is inexpensive, highly reliable, has a high power rating and offers a wide gain bandwidth product. The device is suitable for a variety of applications, from high frequency switching and amplification to broadcast amplifiers and medical imaging.

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