Allicdata Part #: | MRF5S19100HR5-ND |
Manufacturer Part#: |
MRF5S19100HR5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 65V 1.99GHZ NI-780 |
More Detail: | RF Mosfet LDMOS 28V 1A 1.93GHz ~ 1.99GHz 13.9dB 22... |
DataSheet: | MRF5S19100HR5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | LDMOS |
Frequency: | 1.93GHz ~ 1.99GHz |
Gain: | 13.9dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 1A |
Power - Output: | 22W |
Voltage - Rated: | 65V |
Package / Case: | NI-780 |
Supplier Device Package: | NI-780 |
Base Part Number: | MRF5S19100 |
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The MRF5S19100HR5 is a common device used in RF applications that consists of a depletion-mode MOSFET or metal oxide semiconductor field effect transistor. As an RF device, the MOSFET functions as a switching mechanism to control both current and voltage in and out of an electronic circuit. This allows it to be used in several different places and applications, of which include transmitters, amplifiers, mixers and oscillators.
In most cases, MOSFETs are the most useful when they are used in an RF application with a condenser, which offers superior control and stability over other types of transistors. This is because of the low gate-to-drain capacitance, as well as a fast rise/fall time that makes it more efficient than other transistors. When considering an RF application with the MRF5S19100HR5, the condenser values are optimized for the best performance.
The principle of operation of a MOSFET is very simple: when the voltage applied to the gate junction of the MOSFET is greater than its drain-to-source voltage (Vgs), its electrical channel opens up and the current passes from the drain to the source. This is usually referred to as “turn-on”. On the other hand, if the Vgs is reduced to a sufficient level, the channel will be shut down, or “turn-off”, and the current flow is stopped. It\'s also important to note that MOSFETs have a very low ON resistance and a high OFF resistance, meaning that they can offer a great deal of control when it comes to adjusting the current flow.
The MRF5S19100HR5 is the perfect choice for applications that require a wide dynamic range and maximum efficiency. It is particularly useful in RF applications due to its low gate-to-drain capacitance values, which allow for superior control and stability. Furthermore, when used in RF applications, the MOSFET also offers a fast rise/fall time, making it more efficient than other types of transistors.
In addition, due to its low ON resistance and high OFF resistance, the MRF5S19100HR5 is also suitable for very high-speed switching applications, where both current and voltage need to be controlled at a high frequency. This includes applications such as power amplifiers, mixers, and oscillators, as well as receivers and transmitters.
In conclusion, the MRF5S19100HR5 has become a common choice for applications which require precision control and stability, particularly in the RF industry. It is capable of providing very fast rise/fall times, low gate-to-drain capacitance, and low ON resistance, as well as very high OFF resistance, all of which make it an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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MRF5S19100HR5 | NXP USA Inc | 0.0 $ | 1000 | FET RF 65V 1.99GHZ NI-780... |
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