MRF5S19130HR5

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The MRF5S19130HR5 is a robust enhancement-mode gallium nitride (GaN) field-effect transistor (FET) manufactured by Freescale Semiconductor, Inc. It is a member of the RF Power RF transistors family. The device is based on a single-pole, double-throw configuration, which allows the amplifier to handle high power applications. It also has a small footprint and low gate resistance.

The MRF5S19130HR5 is designed for use in high power applications such as high power amplifiers, power switching, wideband amplifiers, and other related applications. It is typically used in RF (radio frequency) power amplifiers and power switching systems. This device is suitable for a variety of wireless applications, including cellular base station and wireless mesh networks.

The device features an integration of a power amplifier and a power switching FET. It is optimized for GaN-on-SiC technology, which helps reduce on-resistance, gate capacitance and gate charge. The amplifier is capable of delivering up to 1.3 watts of linear power (depending on the application). It has a maximum drain-source voltage of 65 volts, a drain-source on-resistance of less than 40 milliohms, and a gate pin capacitance of less than 210 femtofarads.

The working principle of the MRF5S19130HR5 is based on the field-effect that is provided by the gate to the drain when an electric potential is applied. When a voltage is applied to the gate, a depletion layer is created, which affects the resistivity of the channel between the source and the drain. This reduces the resistance between the two. This decrease in resistance is what makes the FET useful in amplifying signals.

The FET can operate at a wide range of frequencies, from 800 to 2,450 MHz. When used in power amplifiers and power switching systems, the device is typically operated in its high efficiency mode, which helps reduce power losses. The device also features integrated temperature protection, which ensures that the device does not overheat when operating at higher temperatures.

The MRF5S19130HR5 device is ideal for applications that require high power capacity, low gate resistance, and high frequency operation. It is capable of withstanding thermal shock, and its design allows for efficient heat dissipation. It is suitable for a variety of wireless applications, and its small size makes it suitable for compact designs. Overall, the MRF5S19130HR5 is a robust, durable, and reliable device.

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