MRF5S4140HR5

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The MRF5S4140HR5 is a RF Field Effect Transistor (FET) commonly used to amplify or switch signals. A FET is a type of transistor consisting of a thin strip of semiconductor material. It acts like an electronic switch, controlling the flow of currents through its terminals based on the amount of voltage applied across its two electrodes. FETs are widely used in radio frequency (RF) applications for their low noise, high stability and linearity, high power output, large bandwidth, and wide temperature range.

The MRF5S4140HR5 is built from a lateral N-Channel Enhancement mode MOSFET. The principal advantage of the MOSFET is its large input impedance combined with its high switching speed. The FET is packaged into a Hermetically sealed housing that is rated for operation up to a maximum temperature of 175°C. The device is well suited for many RF applications due to its wide operating frequency range from 800 MHz to 2.216 GHz, with an excellent noise figure of just 2.3 dB.

The MRF5S4140HR5 is ideal for wideband amplifier designs and offers impressive performance with high gain, low current, and high power output when used in a circuit. The device is used widely in amplifiers, transmitters, receivers and switching systems in telecommunications, medical and industrial applications. It is also used in test equipment, antennas and signal processors ranging from GPS, base stations, military and avionics.

The MRF5S4140HR5 works based on the MOSFET principle whereby the gate voltage can be used to control the current flow. It has an extremely low gate current so the gate terminal can be connected directly to the output of an amplifier or pre-amplifier circuit. This allows the voltage applied to the gate to control the amount of current passed through the channel. This means voltage levels at the input can be used to switch off or on the flow of current through the device and thus control the signal transmission.

The MRF5S4140HR5 is a robust and reliable RF FET with outstanding performance characteristics, making it a popular choice for a wide range of applications. It is suitable for both linear and switch mode operation and offers excellent linearity, low power consumption, and good reliability. The device has a fast switching time and a wide temperature range, allowing it to perform well in various environments. Due to its high power output and good linearity, the device can deliver impressive performance when used in a circuit.

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