MRF5S21090HSR5

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	LDMOS
Frequency:	2.11GHz
Gain:	14.5dB
Voltage - Test:	28V
Current Rating:	--
Noise Figure:	--
Current - Test:	850mA
Power - Output:	19W
Voltage - Rated:	65V
Package / Case:	NI-780S
Supplier Device Package:	NI-780S
Base Part Number:	MRF5S21090

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Introduction to MRF5S21090HSR5 Application Field and Working PrincipleThe MRF5S21090HSR5 is a device known as a Metal Oxide Semiconductor Field-Effect Transistor, or MOSFET. It is designed to be used in radio frequency (RF) applications, including amplifier circuits and signal switching. While MOSFETs generally have a wide range of uses, the MRF5S21090HSR5 is best suited to RF applications because of its low signal loss, wide bandwidth, and high power efficiency. In this article, we will discuss in detail the application field and working principle of the MRF5S21090HSR5, as well as its features and benefits.Application FieldMOSFETs are ideal for RF applications due to their low cost and high speed operation. The MRF5S21090HSR5 is especially useful for RF applications due to its high frequency operation and functionality, with a frequency range of 10 kHz to 10 GHz. This makes it suitable for RF amplifier circuits, switching circuits, and other devices operating at high frequencies. In addition, its low signal loss and high power efficiency make it suitable for high-power applications, such as those in mobile networks and satellite communications systems.Working PrincipleThe working principle of the MRF5S21090HSR5 is based on the transfer of charge between the drain and source terminals. To do this, the MOSFET is designed with a gate, drain, and source. The gate is a terminal through which the signal is applied and is used to control the current flow between the drain and source. By connecting the gate to a voltage, the drain-source voltage can be adjusted, allowing for the control of the current flow.When a signal is applied to the gate, the voltage is converted into an electric field, which changes the conductivity of the channel. Depending on the size of the signal and the amount of charge, the channel will open or close, allowing for the regulation of current flow.Features and BenefitsThe MRF5S21090HSR5 offers a variety of features and benefits for use in RF applications. One of its most notable features is its high speed operation, allowing for the high speed transmission of data. In addition, it offers a wide operating temperature range from -55°C to +175°C. This makes it suitable for use in harsh environments and ensures reliable operation in high temperatures.The device also offers high levels of isolation, with the isolation between its drain and source measuring up to 50 dB. This helps to ensure signal integrity, which is vital in RF applications. The MRF5S21090HSR5 also offers excellent power efficiency, with a drain current (Id) of up to 40 A and a drain-source voltage of 500 V. This allows the device to easily handle a wide range of power requirements.ConclusionIn conclusion, the MRF5S21090HSR5 is an ideal device for use in RF applications due to its wide frequency range, low signal loss, and high power efficiency. Its features and benefits, such as its high speed operation, wide operating temperature range, high levels of isolation, and excellent power efficiency make it an ideal choice for RF applications. With its wide range of uses, the MRF5S21090HSR5 is a versatile and reliable choice for any RF application.

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