MRF5812R1 Allicdata Electronics
Allicdata Part #:

MRF5812R1-ND

Manufacturer Part#:

MRF5812R1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS NPN 15V 200MA SO8
More Detail: RF Transistor NPN 15V 200mA 5GHz 1.25W Surface Mou...
DataSheet: MRF5812R1 datasheetMRF5812R1 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 15V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Current - Collector (Ic) (Max): 200mA
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The MRF5812R1 is a high-performance intermediate power field effect transistor consisting of an N-Channel enhancement mode lateral MOSFET. Its high power output, low noise figure, and excellent gain make it ideal for use in RF power amplifiers in cellular systems, as well as general-purpose RF amplifiers.

The MRF5812R1 is a type of bipolar junction transistor (BJT). In this type of transistor, current is able to easily flow in a forward direction between the base and collector, while the current flow in the reverse direction is blocked. This is the operating principle of the BJT, and the MRF5812R1 is no exception.

The MRF5812R1 is designed for use in RF applications such as cellular phones, radio transceivers, two-way radio systems, pagers and other wireless communications systems. It is an ideal choice for applications that require both good linearity and high efficiency. It is also ideal for applications which require low distortion and low noise output.

The MRF5812R1 is capable of providing a great amount of RF power output and has an excellent gain. It operates in the frequency range from 100MHz up to 1000MHz and can handle up to 27 watts of RF power output. It has a low noise figure of 7dB typ. and a typical gain of 13dB across its entire operating frequency range.

In addition, the MRF5812R1 has excellent performance in terms of linearity. It has an IM3 of -30dbc, which is very low for a transistor of this type. Its harmonic distortion is also very low, typically around 0.1%, which makes it suitable for use in many RF applications.

Other features that make the MRF5812R1 stand out from other types of transistors include its low-profile package and low biasing requirements. Furthermore, with its low thermal resistance, it is capable of dissipating heat quickly, allowing for greater power output in a variety of applications.

The MRF5812R1 is an excellent choice for use in RF power amplifiers, as well as in general-purpose RF amplifiers. With its excellent combination of power output, linearity, and low noise figure, it is sure to be an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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