MRF6VP3450HR6 Allicdata Electronics
Allicdata Part #:

MRF6VP3450HR6TR-ND

Manufacturer Part#:

MRF6VP3450HR6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: NXP USA Inc
Short Description: FET RF 2CH 110V 860MHZ NI-1230
More Detail: RF Mosfet LDMOS (Dual) 50V 1.4A 860MHz 22.5dB 90W ...
DataSheet: MRF6VP3450HR6 datasheetMRF6VP3450HR6 Datasheet/PDF
Quantity: 150
Stock 150Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Transistor Type: LDMOS (Dual)
Frequency: 860MHz
Gain: 22.5dB
Voltage - Test: 50V
Current Rating: --
Noise Figure: --
Current - Test: 1.4A
Power - Output: 90W
Voltage - Rated: 110V
Package / Case: NI-1230
Supplier Device Package: NI-1230
Base Part Number: MRF6VP3450
Description

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The MRF6VP3450HR6 is a 50 Volts (V) Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) with a peak power of 600 watts (W). The MRF6VP3450HR6 is ideally suited for high efficiency telecommunications applications such as point-to-point and multi-point Voice over Internet Protocol (VoIP) systems. This type of transistor has the ability to operate over wide temperature ranges, making them very useful in such applications.

The MRF6VP3450HR6 is manufactured using a high quality, high electron mobility transistor (HEMT). This type of transistor uses a GaN semiconductor material, which is very efficient and has excellent heat dissipation properties. This makes the MRF6VP3450HR6 well-suited for high power applications.

The MRF6VP3450HR6 is commonly used in a variety of applications such as wireless base station radios, satellite communication systems, public safety radios, and wireless broadband systems. The transistor is designed to operate over wide temperature ranges, making it suitable for military and high reliability applications. The MRF6VP3450HR6 can also be used in high quality audio amplifiers, which further increases its versatility.

The working principle of the MRF6VP3450HR6 is based on the principle of field effect transistor (FET) technology. In FETs, a small electric current is used to control the flow of larger electric current. This type of technology makes it possible to achieve greater efficiency, higher power output and lower noise levels. The MRF6VP3450HR6 is built with a single source-drain channel and can transfer very large amounts of electrical current.

The MRF6VP3450HR6 is well-suited for high power applications due to its low noise figure, high linearity and wide dynamic range. The transistor features a high frequency response and low impedance as well, making it ideal for use in high efficiency communications applications such as point-to-point and multi-point VoIP systems. The device also has excellent thermal dissipation properties and a high-power handling capacity.

The MRF6VP3450HR6 is a highly efficient and cost-effective component that is well-suited for various high-reliability applications. Due to its wide range of features and specifications, the transistor is capable of operating over a wide range of temperatures and frequencies, making it an ideal choice for various applications. The MRF6VP3450HR6 is highly reliable and can be used in conjunction with other components to further increase efficiency.

The specific data is subject to PDF, and the above content is for reference

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