MRF6S20010NR1

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The MRF6S20010NR1 is a FET that is designed for use in applications that need an optimized solution for an RF power amplifier. It is specifically designed for use in mobile terminals and networks that operate in the 200 MHz to 1 GHz frequency range. It offers a wide band impedance match with a maximum power output of up to 200 watts.

This device is comprised of lateral and vertical DMOS technology, which makes it optimized for use in the mobile phone market. Its DMOS construction has been specifically designed to reduce on-state resistances and to decrease gate charge, thereby allowing the device to generate higher output power and to offer a high level of efficiency.

The MRF6S20010NR1 is available in a variety of packages, such as the SOIC-14, SMD-14 and PQFN-14 packages. It is also available in both single and dual versions. The single version operates at up to 200 watts and the dual version can operate at up to 400 watts.

The MRF6S20010NR1 is a high-performance RF FET that is designed to ensure a high-quality signal and performance. In addition, the FET offers a low-noise solution and a wide range of operating temperature ranges, making it suitable for a variety of applications.

The working principle of the MRF6S20010NR1 is based on a voltage-controlled device. This device is designed to be used in a variety of applications where the output power needs to be regulated or controlled using a power amplifier. The voltage-controlled device works by varying the gate voltage applied to the FET and allowing for a change in the output power.

The MRF6S20010NR1 is an ideal device for use in mobile phone applications and RF amplifiers, as it offers low on-state impedance and a wide operating temperature range. It is also suitable for use in other applications, such as automotive and consumer electronics, that require an optimized solution for an RF amplifier.

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