MRF6V4300NBR5

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The MRF6V4300NBR5 is a N-channel enhancement-mode in a plastic surface-mount package designed for RF power management in RF power amplifier applications. Based on LDMOS technology, it is designed for broadband as well as narrow band applications like DSC/PCS, GSM, CDMA, analog TV and HF/VHF. This device is especially suitable for applications where low drain-source resistance and wide instantaneous input dynamic range are required.

The operating temperature range of the MRF6V4300NBR5 is from -50 degrees Celsius to +170 degrees Celsius, making it suitable for most applications. The rated drain-source voltage is 43V, and the maximum drain-source voltage is 55V. Its maximum allowable drain current is 125mA. The device has an on-resistance of 0.2 ohms and a gate threshold voltage of 6V.

The MRF6V4300NBR5 works with an enhancement-mode operation, which means that it requires a positive gate bias voltage to turn on and operate. This is achieved by providing a positive gate-source voltage with respect to the drain-source voltage. When the gate-source voltage is above the threshold voltage and current is applied, the drain current will increase. As such, the device can be used to switch power between the drain and sources.

The MRF6V4300NBR5 is designed for RF power management applications, and it is well-suited for use in RF power amplifiers. The device can handle frequencies from 500 kHz up to 6 GHz and has a power gain of 10dB. Its high input impedance ensures that the output signal will not be degraded. The device has a good input voltage range and can handle wide instantaneous power ranges, making it ideal for amplifier applications. The device is also suitable for applications that require low drain-source resistance.

The MRF6V4300NBR5 is a popular device for RF power amplifier applications because of its high breakdown voltage, low resistance, and wide frequency range. The device is packaged in a small and light plastic surface mount package, making it easy to integrate into tight spaces and deliver high power density. Although the device is designed for RF power applications, it can also be used in analog circuits, providing excellent linearity.

In summary, the MRF6V4300NBR5 is a N-Channel enhancement-mode transistor in a plastic surface-mount package designed for RF power management applications. It has an operating temperature range of -50 degrees Celsius to +170 degrees Celsius, rated drain-source voltage of 43V, and maximum drain-source voltage of 55V. The device works with an enhancement-mode operation and has an on-resistance of 0.2 ohms and a gate threshold voltage of 6V. Its input impedance ensures that the output signal won’t be degraded, and its high breakdown voltage and low resistance makes it suitable for RF power amplifier applications.

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