Allicdata Part #: | MRF6S20010GNR1TR-ND |
Manufacturer Part#: |
MRF6S20010GNR1 |
Price: | $ 19.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 68V 2.17GHZ TO270-2 GW |
More Detail: | RF Mosfet LDMOS 28V 130mA 2.17GHz 15.5dB 10W TO-27... |
DataSheet: | MRF6S20010GNR1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 17.59420 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 2.17GHz |
Gain: | 15.5dB |
Voltage - Test: | 28V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 130mA |
Power - Output: | 10W |
Voltage - Rated: | 68V |
Package / Case: | TO-270BA |
Supplier Device Package: | TO-270-2 GULL |
Base Part Number: | MRF6S20010 |
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The MRF6S20010GNR1 is a product belonging to the RF MOSFET family and is manufactured by the company Motorola. This kind of transistor is a type of Metal Oxide Semiconductor Field Effect Transistor, a component which is used in electronic devices and circuits. It is typically found in areas such as radios, TV sets, audio amplifiers, and other such devices where high-frequency operation, high power dissipation and low voltage requirements are required.
The MRF6S20010GNR1 is mainly used in radio-frequency applications, such as the generation and amplification of radio signals. It has a high voltage and current capability and is able to withstand high power dissipation. This makes it suitable for a variety of applications including transmitters, receivers, amplifiers and switching circuits. Additionally, it is able to operate within a wide range of frequencies, making it a versatile component which can be used in a number of different devices.
In terms of its physical structure, the MRF6S20010GNR1 has a flat plastic body which is approximately 2mm in height. It has three pins that allow it to be mounted in the circuit board. At the heart of the device is a semiconductor chip made from gallium arsenide. This enables it to control the current that flows through it and manipulate the output signals to generate a desired output.
The working principle behind the MRF6S20010GNR1 is relatively simple. This type of transistor uses the gate voltage to regulate the amount of current which flows through the device. This is done by altering the resistance of the semiconductor material, so that when a positive voltage is applied to the gate, the resistance decreases and the current flow is increased. Conversely, when a negative voltage is applied, the resistance increases and the current is decreased.
The MRF6S20010GNR1 is a powerful and reliable component which is used in a wide range of electronic devices, including radios, TVs, audio amplifiers, and other high-frequency applications. Its relatively small size, simple structure and ability to control the signal flow makes it a readily available and well-suited component for a number of different devices. Additionally, its ability to withstand high power dissipation ensures that it is capable of withstanding the rigours of a wide range of applications, making it a versatile and reliable component.
The specific data is subject to PDF, and the above content is for reference
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