Allicdata Part #: | MRF6V10010NR4TR-ND |
Manufacturer Part#: |
MRF6V10010NR4 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | FET RF 100V 1.09GHZ PLD-1.5 |
More Detail: | RF Mosfet LDMOS 50V 10mA 1.09GHz 25dB 10W PLD-1.5 |
DataSheet: | MRF6V10010NR4 Datasheet/PDF |
Quantity: | 100 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | LDMOS |
Frequency: | 1.09GHz |
Gain: | 25dB |
Voltage - Test: | 50V |
Current Rating: | -- |
Noise Figure: | -- |
Current - Test: | 10mA |
Power - Output: | 10W |
Voltage - Rated: | 100V |
Package / Case: | PLD-1.5 |
Supplier Device Package: | PLD-1.5 |
Base Part Number: | MRF6V10010 |
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The MRF6V10010NR4 is a wideband RF power transistor specifically designed for very high efficiency amplifiers operating in the 10MHz to 1000MHz range. The device is designed to be used in applications such as microwave amplifiers, distributed access systems, and wideband linear amplifiers. It is manufactured using a low cost high productivity HVPE GaN on SiC process. The device features excellent thermomechanical and electrical characteristics including high breakdown voltage, wide bandwidth capability, and very low thermal resistance.
The MRF6V10010NR4 is a Field Effect Transistor (FET) device, which is a type of transistor that utilizes a flow of electrons in a semiconductor medium. It is also a Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET), which is a type of FET that utilizes an insulated gate to control current in a channel of the device. The MRF6V10010NR4 utilizes high power GaN on SiC processes to achieve a very high power gain over a wide range of frequencies.
The working principle of the MRF6V10010NR4 is based on the principle of "majority carriers" in a semiconductor device. A majority carrier is an electron produced by the device that can move freely through the material. A gate voltage applied to the device will allow the majority carriers to move freely into the channel of the device. This flow of majority carriers will cause a current gain in the device which can be used to increase power output.
The MRF6V10010NR4 also utilizes High Voltage Performance Enhancement (HVPE) technology to achieve maximum efficiency at high power levels. The device is able to achieve power gains up to 8000W at frequencies from 10MHz to 1000MHz. The device also features a low drain-source resistance (RDSon) of 4.4 ohms for very efficient operation.
The MRF6V10010NR4 is a versatile device that can be used in a variety of applications including microwave amplifiers, distributed access systems, and wideband linear amplifiers. It is also suitable for automotive and industrial applications due to its high power gain, wide bandwidth, and low thermal resistance. With its wide range of features and applications, the MRF6V10010NR4 is an ideal choice for any high efficiency RF power amplifier design.
The specific data is subject to PDF, and the above content is for reference
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