| Allicdata Part #: | MRF6S18140HSR3-ND |
| Manufacturer Part#: |
MRF6S18140HSR3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | NXP USA Inc |
| Short Description: | FET RF 68V 1.88GHZ NI880S |
| More Detail: | RF Mosfet LDMOS 28V 1.2A 1.88GHz 16dB 29W NI-880S |
| DataSheet: |  MRF6S18140HSR3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 1.88GHz |
| Gain: | 16dB |
| Voltage - Test: | 28V |
| Current Rating: | -- |
| Noise Figure: | -- |
| Current - Test: | 1.2A |
| Power - Output: | 29W |
| Voltage - Rated: | 68V |
| Package / Case: | NI-880S |
| Supplier Device Package: | NI-880S |
| Base Part Number: | MRF6S18140 |
Description
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The MRF6S18140HSR3 is a laterally diffused Metal Oxide Semiconductor Field Effect Transistor (MOSFET) from NXP Semiconductors. It is designed for RF power amplifiers used in ISM and GSM applications. The device is housed in a 3mm x 3mm surface mount package and employs a high linearity and high efficiency technology to achieve robust performance in tough applications.The MRF6S18140HSR3 is an N-Channel enhancement mode MOSFET. It features a low 12.5V gate threshold voltage, a maximum drain current of 140A and output power of 32W typ. at 1.9GHz and 6.3V gate voltage. It also features fourth harmonic linearity of typically36.6dBc and high gain of 16.5dB typically at 1.9GHz. With its state-of-the-art manufacturing process, it is capable of high output power density, high linearity and low distortion, low gate drive requirements and tight parameter distribution.The device is designed for use in Vehicular Based Radio Frequency Identification (RFID) applications such as automatic device identification using uniquely encoded and encoded RFID transponders, wireless access control systems and similar applications. It is also well suited for use in mobile handsets, wireless LAN 802.11b/g compliant devices, microwave remote communication links and point to point links.The MRF6S18140HSR3 uses a silicon gate process which ensures a high degree of consistency from part to part. It also offers improved RF linearity compared to earlier generations of silicon gate MOSFETs. The device features low gate drive requirements, allowing it to be used in RFID applications where the power source may be of low current output.The device also takes advantage of ESD protection technology to protect it against electrostatic discharge. This means it is suitable for use in applications where the environment is subject to electrostatic discharge (ESD).The MRF6S18140HSR3 is capable of operating in high frequency environments when used with the appropriate input signal and power source. It is also capable of operation at room temperature and higher temperature ranges, although its maximum junction temperature should be kept below 175°C to ensure optimal results.The MRF6S18140HSR3 has several key features that make it suitable for use in different applications. Its main gain feature allows it to maintain consistent output power and linearity across a wide range of frequencies and temperatures. It also offers low gate drive requirements and improved RF linearity compared to earlier MOSFETs.In conclusion, the MRF6S18140HSR3 is a quality N-Channel MOSFET designed for RF power amplification in a variety of applications. Its high linearity and high efficiency processing allows it to perform well in a wide range of environments. It also features improved RF linearity compared to previous MOSFETs, low gate drive requirements, and ESD protection. The MRF6S18140HSR3 is an important part of the NXP Semiconductors portfolio and is a key component in the RFID market.
The specific data is subject to PDF, and the above content is for reference
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