MRF6VP11KHR6

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MRF6VP11KHR6 is a GaN High Electron Mobility Transistor (HEMT) that is used for high power linear and saturated operations of wireless infrastructure such as Base Transceiver Stations (BTS), Radio Local Area Networks (RLAN), and Digital Audio Broadcasting (DAB) applications. This device is part of the HEMT technology family of transistors that is specifically geared towards RF applications, and as such is classified by its membership to the Transistors - FETs, MOSFETs - RF grouping.

The HEMT is a power transistor (VDS = 11 V) which is placed in a standard hermetically sealed module and is able to withstand temperatures ranging from -55°C to 150°C. It is designed to operate over the frequency range of 250 MHz to 1000 MHz with up to 11 High grade Doherty Power Amplifier (PA) channels. It is also configured with Dual Throw Dual Gate Transient Control circuits which enable independent control of both rising and falling transitions. With this transistor, Linear or saturated mode operations can be achieved with an efficiency of up to 50%.

The working principle of the MRF6VP11KHR6 is based on the fact that current traveling through an HEMT is mainly controlled by the junction barrier. The resistance of this junction is determined by the bandgap energy, meaning that the voltage applied at the gate controls the electron flow through the transistor. This makes it possible to control both the On and Off states of the transistor, and allows for much larger currents than what is found in field-effect transistors (FETs), enabling higher switching speeds and improved linearity for RF applications.

The MRF6VP11KHR6 is able to provide excellent linearity in both its linear and saturated modes, and can operate with up to 11 PA channels. This makes it ideal for use in a wide variety of applications including base transceiver stations (BTS) systems, radio local area networks (RLAN), and digital audio broadcasting (DAB). Additionally, this transistor is also well-suited for use in high power, high frequency communications systems, such as those used in the military and aerospace, due to its wide operating frequency range and transient control circuits.

In conclusion, the MRF6VP11KHR6 is an HEMT transistor that is designed specifically for use in high power, high frequency communications applications. It is able to provide excellent linearity and efficiency in both linear and saturated modes, enabling it to be used for a variety of applications. The transistor is also configured with transient control circuits which enable independent control of both rising and falling transitions, thus enabling its use in the military and aerospace sector. It is correctly classified as a member of the Transistors - FETs, MOSFETs -RF grouping.

The specific data is subject to PDF, and the above content is for reference