NDF02N60ZH

Series:	--
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600V
Current - Continuous Drain (Id) @ 25°C:	2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	4.8 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:	16nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	325pF @ 25V
FET Feature:	--
Power Dissipation (Max):	24W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220FP
Package / Case:	TO-220-3 Full Pack

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The NDF02N60ZH is a N-Channel MOSFET transistor manufactured by Infineon that provides high power density to consumers. As a single MOSFET, it offers excellent switching and low on-resistance performance for efficient energy transfer. The NDF02N60ZH is particularly suitable for applications in the automotive and industrial field, including HVAC, motor control, and power conversion circuits.MOSFETs are a type of field-effect transistors (FETs) that operate by the application of a voltage at the gate to control the current flowing between the source and drain. This type of transistor generally features a lower resistance than bipolar junction transistors (BJTs). MOSFETs are designed to have the characteristics of a large signal switch in an efficient, low on-resistance package.The NDF02N60ZH transistor is a 1200 V, 600 mohm N-Channel MOSFET. It is rated at 50 A and is specially designed to provide a high power density and superior switching performance. The transistor can handle 12.6 W of power at Tc=25C and comes with a thermal impedance of 4.5 K/W junction to case. The transistor has a breakdown voltage of 1200 V and an on-resistance at 4.5V gate to source of 0.8 mohm.The NDF02N60ZH MOSFET transistor has a wide range of applications from general power switching, DC-to-DC converter, and voltage regulation. It is a suitable choice for many power applications in the automotive, industrial, and consumer electronics industries due to its high power density, low on-resistance, and excellent switching performance. This transistor is also suitable for pulse applications, like motor control and high-end audio applications.When using the NDF02N60ZH MOSFET transistor, it is important to pay attention to its operating temperature range, thermal impedance, and handling of power dissipation. The operating temperature range of this transistor is -55ºC to 150ºC, while the thermal impedance is 4.5 K/W junction to case. This transistor can handle 12.6 W of power, but it is important to ensure that the power dissipation does not exceed the maximum tolerated value of 3.2 W/K junction to case.In summary, the NDF02N60ZH MOSFET transistor is a high power density, low on-resistance, and high switching performance transistor. It is particularly suitable for applications in the automotive and industrial field, including HVAC, motor control, and power conversion circuits. The operating temperature range of this transistor is -55ºC to 150ºC and it has thermal impedance of 4.5 K/W junction to case. With proper consideration of its operating requirements, the NDF02N60ZH can offer superior performance in many applications.

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