Allicdata Part #: | NDF05N50ZGOS-ND |
Manufacturer Part#: |
NDF05N50ZG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V TO-220FP |
More Detail: | N-Channel 500V 5.5A (Tc) 30W (Tc) Through Hole TO-... |
DataSheet: | NDF05N50ZG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 632pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NDF05N50ZG is a type of discrete transistor which is used for various kinds of applications, including power control and switching. In this article, we will discuss the field of application, working principle and other characteristics of this discrete transistor.
Application Field of NDF05N50ZG:
The NDF05N50ZG is a metal-oxide semiconductor field-effect transistor (MOSFET) which is mainly used in high-power applications. It is a 50-V, N-channel MOSFET with an efficient and improved capacitance. This transistor can handle high temperatures, which is one of the advantages of this device. It is widely used in applications like motor control, motor drive, high voltage switching and in high current switching applications.
Working Principle of NDF05N50ZG:
The NDF05N50ZG is a single discrete transistor and works on the principle of a MOSFET operation. It works by controlling the current flow in the channel between the source and drain. The voltage of the gate controls the current flow and the transistor acts as an energy amplifier. When the gate voltage is negative, no current flows through the channel, thereby allowing the device to be turned off or ‘off’. When the gate voltage is positive, the current flows through the channel and the device is said to be “on” or conducting.
The NDF05N50ZG works on the principle of field effect amplification. In this process, the gate voltage is applied to the channel between the source and drain to control the current flow. The amount of current flowing through the channel is dependent on the applied voltage. This process works in the same way as it works in any other transistor, in that it basically amplifies the current flow.
Other Characteristics of NDF05N50ZG:
The NDF05N50ZG has a maximum drain-source voltage of 50V, a maximum drain current of 5A and has a maximum power dissipation of 200W. It has a robust construction, with thick edge terminations to protect it from external shocks. It also has low gate threshold voltage, which helps to minimize losses while switching the transistor. The speed of operation of the NDF05N50ZG is relatively high, and is capable of switching at frequencies exceeding 250kHz.
The NDF05N50ZG has a high capacitance efficiency, and it can reach higher capacitances than other MOSFETs. It is also suitable for use in high temperature environments, thanks to its high thermal performance. It is also resistant to electrostatic discharges and is highly reliable.
In conclusion, the NDF05N50ZG is an efficient, high power MOSFET transistor with a wide range of applications. This device is suitable for use in high current switching applications and is capable of switching at high frequencies. It is also capable of operating at high temperatures and is highly reliable. Its capacitance efficiency and electrostatic discharge resistance make it a popular choice among electrical engineers.
The specific data is subject to PDF, and the above content is for reference
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