NDF03N60ZH

Series:	--
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600V
Current - Continuous Drain (Id) @ 25°C:	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	3.6 Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	372pF @ 25V
FET Feature:	--
Power Dissipation (Max):	27W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220FP
Package / Case:	TO-220-3 Full Pack

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NDF03N60ZH is a non-saturated three-terminal field-effect transistor that is used in various applications. It was developed by NXP, a global leader in semiconductor technologies. NDF03N60ZH utilizes N-channel enhancement-mode composition that enables it to be used in various medium-to-high voltage and low-to-medium current switching applications.The NDF03N60ZH has a source, drain and gate terminal and is commonly used as a switch, or as a transistor amplifier. A typical application for the NDF03N60ZH is used in motor control applications. An example of this is the control of motor speed, where the gate controls the motor speed when used in combination with other logical circuits.Likewise, NDF03N60ZH can be used in switched power supplies. Here it may be used as an “on” and “off” switch. Additionally, due to its linear characteristics, it can be used to vary the current or voltage level in a circuit; for instance, when used in combination with an operational amplifier, a small difference in gate voltage can result in a large change in current or voltage.When it comes to its working principle, NDF03N60ZH is a type of insulated-gate field-effect transistor or IGFET which is the most common type used in switching applications. IGFETs are voltage-control devices – meaning they will turn “on” or “off” based on the voltage applied to the gate terminal. When the input voltage nears the threshold voltage of the device, the resulting current flowing through the device will increase rapidly.Therefore, a relatively low voltage applied to the gate terminal can result in a much higher voltage applied to the drain. In NDF03N60ZH, the input voltage must be raised to the threshold voltage of 7V (Max); any voltage below 7V will not cause the device to switch “on”.The maximum drain current of the NDF03N60ZH device is 60A, while the maximum drain source voltage is 600V. At a channel temperature of (Tj) of 150°C, the maximum power dissipation of the device is 450W.Furthermore, the device has a gate charge (Qgs) of 6μC (at 8V), which enables it to rapidly turn “on” and “off” in response to gate voltage. The maximum gate-source voltage of NDF03N60ZH is ±20V; any voltage beyond ±20V will not result in an “on” state. Moreover, the device employs a current limiting protection circuit to help prevent damage from accidental short circuit.Also, due to a very low gate threshold voltage, NDF03N60ZH is capable of operating at very low operating supply voltages. This feature makes it an ideal choice for many low- and medium-voltage applications.In conclusion, the NDF03N60ZH is a versatile device that can be used in numerous applications, both as a switch and an amplifier. Thanks to its low gate threshold voltage and maximum drain source voltage, the device can handle numerous medium- to high-voltage and low- to medium-current switching applications. As such, the NDF03N60ZH is a great choice for motor control and switched power supplies.

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