Allicdata Part #: | NDF04N62ZGOS-ND |
Manufacturer Part#: |
NDF04N62ZG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 620V 4.4A TO220FP |
More Detail: | N-Channel 620V 4.4A (Tc) 28W (Tc) Through Hole TO-... |
DataSheet: | NDF04N62ZG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 535pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 620V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NDF04N62ZG Application Field and Working Principle
The NDF04N62ZG is an insulated gate bipolar transistor (IGBT) that has a wide range of applications and is used in various electronic systems or devices. IGBTs are power semiconductor devices which are used to control and switch large amounts of current that is needed to operate a large number of electronic devices. The NDF04N62ZG is used in AC and DC switches, flyback and resonant converters, and motor controllers, as well as a number of other applications.
The NDF04N62ZG is a single-stage IGBT with a drain-source breakdown voltage of 600 V, a continuous collector current of 25 A and a maximum pulse collector current of 40 A. It has an N-channel MOSFET gate that is driven by an insulated gate bipolar transistor which has an insulation voltage of up to 1700 V.
The working principle of the NDF04N62ZG is based on the conduction of current between the collector and the emitter terminals. When a positive voltage is applied to the gate terminal, the N-channel MOSFET gate is driven and a current begins to flow between the collector-emitter terminals. When the voltage is removed, the gate will be switched off and the current will be shut off. The IGBT has a wide range of applications, including high-frequency power switching, alternating current (AC) circuit protection, DC/AC conversion, over-voltage protection, high-power rectification, solenoid and motor control, and pulse circuit switching, among others.
The NDF04N62ZG utilizes an internal temperature sensor that can detect the temperature inside the IGBT package. This allows the user to adjust the current flowing through the IGBT based on the temperature and ensure that the IGBT does not become damaged due to overheating. The IGBT also has a built-in avalanche protection that is used to prevent the IGBT from breaking down when the voltage across its terminals increases.
The NDF04N62ZG is a unique and reliable power switching device that has numerous applications in various types of electronic systems or devices. It is especially useful for AC and DC switching, flyback and resonant converters, motor controllers, and other applications, as it can handle large currents and has a wide range of applications. With its internal temperature sensor and avalanche protection features, the NDF04N62ZG is a dependable and reliable IGBT, making it a popular choice among electronic engineers and power-switching manufacturers.
The specific data is subject to PDF, and the above content is for reference
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