Allicdata Part #: | NDF08N60ZH-ND |
Manufacturer Part#: |
NDF08N60ZH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 8.4A TO-220FP |
More Detail: | N-Channel 600V 8.4A (Tc) 36W (Tc) Through Hole TO-... |
DataSheet: | NDF08N60ZH Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 8.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1370pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 36W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FP |
Package / Case: | TO-220-3 Full Pack |
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The NDF08N60ZH is a type of insulated-gate bipolar transistor (IGBT). It belongs to the family of Field-effect transistors (FETs) and metal oxide semiconductor FETs (MOSFETs). This type of IGBT is often called a “single-pole, double-throw” (SPDT) IGBT because it has a single gate and two separate outputs. It is commonly used in a wide range of applications where high-speed switching and high-power devices are needed.
The NDF08N60ZH is a special type of IGBT. It contains a silicon insulated-gate bipolar transistor (IGBT) with a dielectric thickness of 8 micrometers. The dielectric layer prevents electric current from flowing between the gate and the collector or emitter. The NDF08N60ZH also employs a metal-oxide semiconductor FET structure with a gate width of 60 millimeters. This structure helps to improve the switching speed and the temperature stability of the IGBT.
The working principle of NDF08N60ZH is based on the controlled bipolar transistor action of the insulated-gate. It utilizes heat-resistant metal oxide film on its semiconductor surface. The gate voltage controls the current flow between the collector and emitter. The NDF08N60ZH is a fast switching device with a maximum frequency of 1million hertz (MHz). By controlling the gate voltage, it is possible to turn the device off or on rapidly.
The NDF08N60ZH is designed to be used in a wide range of applications. It has the ability to deliver high-power and high-speed switching. It is used in power electronic circuits and power switching products. It can be used to control the current flow in applications such as electric vehicles, industrial robots, and electric power systems. The NDF08N60ZH is also used in home appliances, electric motors, and lighting systems. It is also used in a variety of industrial and automotive applications.
The NDF08N60ZH has a wide range of applications due to its fast switching speeds and its temperature stability. Its availability in different voltage ratings and temperatures further adds to its appeal. This IGBT is used for high-power switching, switching regulators, power converters, motor controls, and inverter circuits. It is also popular for other high-power applications such as wind power and solar energy.
All in all, the NDF08N60ZH device is a popular choice for a variety of power switching and control applications. It is a high-power, fast-switching device with a good temperature stability. Its wide range of applications has made it a popular choice for various power electronic applications. The NDF08N60ZH offers a reliable and cost-effective solution that can help to improve the performance of power electronic devices.
The specific data is subject to PDF, and the above content is for reference
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