Allicdata Part #: | NDF08N50ZGOS-ND |
Manufacturer Part#: |
NDF08N50ZG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 8.5A TO-220FP |
More Detail: | N-Channel 500V 8.5A (Tc) 35W (Tc) Through Hole TO-... |
DataSheet: | NDF08N50ZG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1095pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 3.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NDF08N50ZG is a MOSFET, which is a type of transistor, of the single type. It is a field effect transistor (FET) used in numerous applications ranging from logic circuits and amplifiers to power switching. The NDF08N50ZG is capable of saturating in a very short time, making it a fast on and off switch that is suitable for use in areas such as networking, telecommunications, notebook computer power supplies, high-performance audio and video equipment, and many other fields.
Application Fields
The NDF08N50ZG can be used in various application fields due to its various features. Its low ON resistance, fast turn-off and turn-on times, and wide input capacitance make it suitable for use in communications and networking applications. Moreover, its remarkably low gate-drain charge makes it ideal for use in power supplies and audio/video equipment, as it can switch small signals with little distortion. Additionally, its very low existing gate charge enables it to work in any switching environment, even at high frequencies. Lastly, its easy-to-handle body facilitates its use in power control, high-speed DC/DC converters, redundant power systems, and a plethora of other applications due to its robust design and wide operating conditions.
Working Principle
NDF08N50ZG MOSFETs operate on the principle of controlling the flow of electrons through the gate-drain junction. It works by creating a voltage-controlled channel between its drain and source terminals, where current flows from the drain to the source terminal when there is a voltage difference between the two. When no voltage is applied to the gate (Vgs= 0 V), the FET is in its OFF state, signifying no conduction. When a voltage is applied to the gate (Vgs > 0 V), the depletion layer in the gate-drain junction is reduced, increasing the conduction from the drain to the source terminal, indicating an ON state. The ratio between Vgs and Vds is known as the drain-to-source voltage ratio (Vds/Vgs), and is an important factor when determining the total power dissipation (and thus the performance) of the FET.
The specific data is subject to PDF, and the above content is for reference
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