NDF04N60ZG-001

The NDF04N60ZG-001 is a type of field-effect transistor (FET) molded in a surface mount package designed by ON Semiconductor. FETs are semiconductors that can control current between two terminals--the source and the drain--by applying an electric field between two additional electrodes, or the gate and the source. The FET is a powerful type of transistor that is used in some of the most critical electronic devices today.The NDF04N60ZG-001 is a single FET, meaning it contains only one FET instead of a pair. This type of single FET is also known as a single-level FET, or SLFET. It has a P-channel MOSFET, meaning that it is built using a process called Metal-Oxide-Semiconductor Field-Effect Transistor. The FET uses the P-channel to regulate electric current flow.The NDF04N60ZG-001 is often used in power-supply designs, motor control circuits, and other power-electronic applications, such as motor drives, inverters, and DC-DC converters. In these applications, it proves advantageous due to its low-cost, low-voltage/low-power performance. It is also used for amplifying electrical signals and voltage control. Additionally, it can provide efficient switching in power supplies to control load current, switching losses, and efficiency levels. The NDF04N60ZG-001 has a drain-source breakdown voltage of approximately 600 volts, a drain-source on-state resistance of 7.4 ohms, and a maximum current rating of 4 A. It also has a breakdown voltage rating of 20 V and an on-state resistance of 0.1Ω. Its operating temperature range is -55°C to +150°C.The NDF04N60ZG-001’s primary benefit is its capability to control the flow of currents in power-supply designs. The electric field between the gate and the source works in a similar way to an electrical on-off switch. When the voltage supplied to the gate is off, no current flows in the circuit and the FET is off. This allows the current to be regulated and optimized using the gate’s voltage. The maximum benefit of the NDF04N60ZG-001 is its capability to improve the efficiency of power-supplies. It can be used to reduce power consumption and to improve the quality of the power being delivered to the load. The NDF04N60ZG-001 also significantly reduces switching losses due to its low on-state resistance. This means that it can handle high currents and can switch quickly, thus reducing power dissipation. The NDF04N60ZG-001 is a very reliable FET because it has been designed with high-quality materials and production techniques. Furthermore, the FET has been through rigorous testing to ensure that it will work reliably in its intended applications. This helps make the NDF04N60ZG-001 one of the best single FETs on the market.Overall, the NDF04N60ZG-001 is a reliable, low-cost FET that can be used in a variety of power-electronic applications. Its low on-state resistance and high breakdown voltage make it ideal for controlling current and switching in power supplies, while its excellent electrical performance ensures that it will work reliably in its intended application.

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