Allicdata Part #: | NDF05N50ZH-ND |
Manufacturer Part#: |
NDF05N50ZH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 5.5A TO-220FP |
More Detail: | N-Channel 500V 5.5A (Tc) 30W (Tc) Through Hole TO-... |
DataSheet: | NDF05N50ZH Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.2A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 632pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 30W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FP |
Package / Case: | TO-220-3 Full Pack |
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The NDF05N50ZH is a single, N-channel MOSFET (metal-oxide semiconductor field-effect transistor) that is widely used in various electronic applications. MOSFETs are typically used as switches, amplifiers, and voltage-controlled resistors. Due to their low on-state resistance, low input capacitance and high speed, MOSFETs are ideal for many applications, including high-frequency and low-noise systems.
MOSFETs rely on the “inversion layer” effect. This is created when a voltage is applied to the gate, which in turn creates an electric field that modulates the conductivity of the channel by “inverting” or turning on the channel current. The NDF05N50ZH is a depletion-mode MOSFET, meaning that the channel current flows without the need for a gate bias. This device also has a maximum drain-to-source voltage of 500V, a maximum drain current of 5A and a maximum drain-source on-state resistance of 0.05Ω.
The NDF05N50ZH is an ideal MOSFET for both compact and reliable high power applications. This is because of its easy gate drive, low gate threshold voltage, and short recovery time. They are commonly used as switches in applications such as automotive power supplies, LED dimming circuits, and inverters. They are also used in switching power amplifiers, as they can provide high-speed switching with low drain-source on-state resistance.
The NDF05N50ZH is also ideal for low-input voltage applications, as its low gate threshold voltage means it can easily be driven with low-voltage signals. This is important for applications such as battery-powered equipment, as it reduces power consumption. This MOSFET is also used in DC-DC converters, voltage regulators and Class-D audio amplifiers.
The NDF05N50ZH is also suitable for use in many common RF applications. This is thanks to its high output impedance, low input capacitance and its good thermal stability, which make it suitable for RF amplifier designs. It is used in RF attenuators, mixers and amplifiers, as well as for digital-to-analog and analog-to-digital converters.
In summary, the NDF05N50ZH is a single, N-channel MOSFET with a maximum drain-to-source voltage of 500V and a maximum drain current of 5A. This device is commonly used as switches in a variety of high-power applications, such as automotive power supplies, LED dimming circuits and inverters. Its low gate threshold voltage also makes it ideal for low-input voltage applications, such as battery-powered equipment. Lastly, this MOSFET is also suitable for many common RF applications, such as RF amplifiers, RF attenuators and mixers.
The specific data is subject to PDF, and the above content is for reference
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