NDF05N50ZH Allicdata Electronics
Allicdata Part #:

NDF05N50ZH-ND

Manufacturer Part#:

NDF05N50ZH

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 500V 5.5A TO-220FP
More Detail: N-Channel 500V 5.5A (Tc) 30W (Tc) Through Hole TO-...
DataSheet: NDF05N50ZH datasheetNDF05N50ZH Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 25V
FET Feature: --
Power Dissipation (Max): 30W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack
Description

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The NDF05N50ZH is a single, N-channel MOSFET (metal-oxide semiconductor field-effect transistor) that is widely used in various electronic applications. MOSFETs are typically used as switches, amplifiers, and voltage-controlled resistors. Due to their low on-state resistance, low input capacitance and high speed, MOSFETs are ideal for many applications, including high-frequency and low-noise systems.

MOSFETs rely on the “inversion layer” effect. This is created when a voltage is applied to the gate, which in turn creates an electric field that modulates the conductivity of the channel by “inverting” or turning on the channel current. The NDF05N50ZH is a depletion-mode MOSFET, meaning that the channel current flows without the need for a gate bias. This device also has a maximum drain-to-source voltage of 500V, a maximum drain current of 5A and a maximum drain-source on-state resistance of 0.05Ω.

The NDF05N50ZH is an ideal MOSFET for both compact and reliable high power applications. This is because of its easy gate drive, low gate threshold voltage, and short recovery time. They are commonly used as switches in applications such as automotive power supplies, LED dimming circuits, and inverters. They are also used in switching power amplifiers, as they can provide high-speed switching with low drain-source on-state resistance.

The NDF05N50ZH is also ideal for low-input voltage applications, as its low gate threshold voltage means it can easily be driven with low-voltage signals. This is important for applications such as battery-powered equipment, as it reduces power consumption. This MOSFET is also used in DC-DC converters, voltage regulators and Class-D audio amplifiers.

The NDF05N50ZH is also suitable for use in many common RF applications. This is thanks to its high output impedance, low input capacitance and its good thermal stability, which make it suitable for RF amplifier designs. It is used in RF attenuators, mixers and amplifiers, as well as for digital-to-analog and analog-to-digital converters.

In summary, the NDF05N50ZH is a single, N-channel MOSFET with a maximum drain-to-source voltage of 500V and a maximum drain current of 5A. This device is commonly used as switches in a variety of high-power applications, such as automotive power supplies, LED dimming circuits and inverters. Its low gate threshold voltage also makes it ideal for low-input voltage applications, such as battery-powered equipment. Lastly, this MOSFET is also suitable for many common RF applications, such as RF amplifiers, RF attenuators and mixers.

The specific data is subject to PDF, and the above content is for reference

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