Allicdata Part #: | NDF08N50ZH-ND |
Manufacturer Part#: |
NDF08N50ZH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 8.5A TO220FP |
More Detail: | N-Channel 500V 8.5A (Tc) 35W (Tc) Through Hole TO-... |
DataSheet: | NDF08N50ZH Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500V |
Current - Continuous Drain (Id) @ 25°C: | 8.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 3.6A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1095pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 35W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FP |
Package / Case: | TO-220-3 Full Pack |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NDF08N50ZH is a type of N-channel enhancement mode vertical double-diffused metal oxide semiconductor (VDMOS) field effect transistor (FET). This type of FET is usually used in power switching applications, linear amplifiers and high-voltage switching circuits. It features high voltage and current gain, fast recovery time, and low on-resistance.
The working principle of the NDF08N50ZH is basically the same as that of the standard FET. When a voltage is applied across two electrical terminals or leads (called the source and the drain), current passes through the channel created under the gate (the third lead), and controlled by the gate voltage. For n-type FETs, such as the NDF08N50ZH, the current flow between the source and the drain is blocked until a threshold voltage applied to the gate is exceeded.
The threshold voltage of the NDF08N50ZH is typically 8V plus or minus 5%, with a maximum gate-to-source voltage of 20V. It has a drain-to-source current rating of 8A and a total power dissipation of 125W. The rise and fall time of this FET is also very fast, enabling it to switch from on to off rapidly. It is also rated to operate at a high temperature, up to 175°C.
The main application of the NDF08N50ZH is in power switching applications, due to its high voltage and current gain, fast recovery time, and low on-resistance. In these applications, the FET is typically used as a switch to control the flow of electrical current from the source to the drain. It is also used in linear amplifiers where it can be used as a variable resistor to control the gain of the amplifier, and in high-voltage switching circuits, where its fast switching time is valuable.
NDF08N50ZH is also used in process control applications, where it can be used to control the flow rate of a process, or to control the temperature, pressure, or speed of a process. It is also used for motor control, as a variable resistor in an electric motor, or to vary the torque or speed of an electric motor.
The NDF08N50ZH is a versatile FET, with a wide range of applications in both linear and switching applications. Its fast switching time, low on-resistance, and high voltage and current ratings make it suitable for many applications requiring precise control of electric current, voltage, and power. With its broad range of applications, it is easy to see why the NDF08N50ZH is becoming increasingly popular.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ASMT-MBK0-NDF00 | Broadcom Lim... | 0.0 $ | 1000 | PWR LED SOURCE 1W BLUE IN... |
ASMT-MY60-NDF00 | Broadcom Lim... | 0.0 $ | 1000 | LED MOONSTONE WM WHT 3300... |
ASMT-MYH2-NDF00 | Broadcom Lim... | 0.0 $ | 1000 | LED MOONSTONE WM WHT 3300... |
ASMT-MB00-NDF00 | Broadcom Lim... | 1.61 $ | 1000 | PWR LED SOURCE 1W BLUE IN... |
NDF02N60ZH | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 2.4A TO2... |
NDF03N60ZH | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 3.1A TO2... |
NDF04N60ZH | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 4.8A TO2... |
NDF05N50ZH | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 5.5A TO-... |
NDF06N60ZH | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.1A TO2... |
NDF08N50ZH | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V 8.5A TO2... |
NDF08N60ZH | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 8.4A TO-... |
NDF0610 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 60V 180MA TO9... |
NDF04N60ZG | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.8A TO-... |
NDF06N60ZG | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 7.1A TO-... |
NDF05N50ZG | ON Semicondu... | -- | 1000 | MOSFET N-CH 500V TO-220FP... |
NDF08N50ZG | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 500V 8.5A TO-... |
NDF02N60ZG | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 2.4A TO2... |
NDF03N60ZG | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 3.1A TO2... |
NDF04N62ZG | ON Semicondu... | -- | 1000 | MOSFET N-CH 620V 4.4A TO2... |
NDF06N62ZG | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 620V 6A TO220... |
NDF08N60ZG | ON Semicondu... | -- | 1000 | MOSFET N-CH 600V 7.5A TO2... |
NDF04N60ZG-001 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 4.8A TO-... |
NDF06N60ZG-001 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 600V 7.1A TO-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...