Allicdata Part #: | NDF06N60ZHOS-ND |
Manufacturer Part#: |
NDF06N60ZH |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 7.1A TO220FP |
More Detail: | N-Channel 600V 7.1A (Tc) 35W (Tc) Through Hole TO-... |
DataSheet: | NDF06N60ZH Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Power Dissipation (Max): | 35W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FP |
Package / Case: | TO-220-3 Full Pack |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 7.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 1107pF @ 25V |
FET Feature: | -- |
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NDF06N60ZH is a rather powerful transistor commonly used in power electronics applications. It is a type of field-effect transistor (FET) known as a metal-oxide-semiconductor field-effect transistor (MOSFET). The “ZH” on the end of the name denotes that it is a high-voltage (300V) device.
Generally speaking, MOSFETs are more efficient than bipolar transistors when it comes to controlling high power. This is because the gate current passing through the transistor is much lower when compared to bipolar transistors. This allows the MOSFET to turn on and off or switch faster and reduces the amount of power wasted during switching. As a result, the NDF06N60ZH is a common choice for applications that require high voltage and power control.
When it comes to applications, the NDF06N60ZH has a variety of uses ranging from high and low power switching applications to wide band amplifiers. It is commonly used in switch mode power supplies for power conversion as well as DC motor control, lighting and heating applications. Some of the parameters to take into consideration when choosing the NDF06N60ZH is its rated drain-source voltage and its maximum safe operating temperature.
Now that we know what the NDF06N60ZH can be used for, let’s discuss how it works. The NDF06N60ZH operates based on the principle of electrostatic control of the current between the source and the drain. This type of control is made possible with the help of a gate, which is connected to the drain through an insulated gate oxide layer. When there is a voltage applied to the gate, an electrostatic field is created which causes a “channel” to form, allowing current to pass through. The amount of current that passes through can be adjusted by changing the voltage applied to the gate.
In addition to controlling the current, the gate can also control the “on-state” or “off-state” of the MOSFET. When the gate voltage is greater than the threshold voltage of the MOSFET, it is considered to be in an “on-state”. On the other hand, if the gate voltage is lower than the threshold voltage, the MOSFET is considered to be in an “off-state”. The “on-state” and “off-state” of the MOSFET determine the type of application it can be used for.
The NDF06N60ZH is a powerful and versatile transistor that can be used for a variety of high and low power switching applications. By controlling the current, voltage and the on-state or off-state through the gate, it can be used for power conversion, DC motor control, lighting, heating and wide band amplifier applications. When choosing the NDF06N60ZH, be sure to take into account its rating drain-source voltage and maximum safe operating temperature.
The specific data is subject to PDF, and the above content is for reference
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