NDF08N60ZG

Vgs(th) (Max) @ Id:	4.5V @ 100µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	36W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1140pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	39nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	950 mOhm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8.4A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction to NDF08N60ZGThe NDF08N60ZG is a silicon N-channel Zener-protected PowerTrench® MOSFET from ON Semiconductor. It is designed to provide a highly efficient and cost-effective solution in power MOSFET applications in various current-sensing and power management applications such as AC-DC converters, DC-DC converters, DC inverters, and other industrial applications.Application Fields of NDF08N60ZGThe NDF08N60ZG is specially suitable for switching applications such as AC-DC converters and DC-DC converters which require both high efficiency and cost performance. This device uses ON Semiconductor’s proprietary PowerTrench technology, resulting in lower gate charge, lower gate-source capacitance, and higher gate voltage drive capability than other devices in the same package size. Therefore, it is capable of providing higher switching frequencies, higher current-handling capacity, and faster switching speeds compared to other devices with similar package size.In addition, it provides very low on-resistance at 4.0mΩ which is suitable for low dropout regulator and DC-DC converter applications. Other features of this device include on-resistance tolerance of 10%, avalanche-rated of 500V in force-sensing switches, peak current capability up to 60A, and I²t limit of 3.2 A²s.Working Principle of NDF08N60ZGThe working principle of the NDF08N60ZG can be considered in two parts: the Zener protection and the PowerTrench.The built-in Zener protection helps to keep the device safe by limiting the gate voltage beyond its rated voltage rating. It also allows the device to use standard gate drive voltage ratings without additional external components, making it easier to use.The PowerTrench technology is the primary driving force in this device. This technology helps to decrease gate charge and gate-source capacitance while providing higher gate voltage drive capability and higher current-handling capacity than other similar devices. It also provides a lower on-resistance compared to other devices with similar package size.ConclusionThe NDF08N60ZG PowerTrench® MOSFET from ON Semiconductor is a silicon N-channel Zener-protected MOSFET device, designed specifically to provide a highly efficient and cost-effective solution in power MOSFET applications in various current-sensing and power management applications such as AC-DC converters, DC-DC converters, DC inverters, and other industrial applications.It features a built-in Zener protection and PowerTrench technology which provides lower gate charge, lower gate-source capacitance, higher gate voltage drive capability, higher switching frequencies, higher current-handling capacity, and faster switching speeds. It also provides very low on-resistance at 4.0mΩ which is suitable for low dropout regulator and DC-DC converter applications. In conclusion, the NDF08N60ZG provides excellent performance, high efficacy, and low cost, making it a perfect choice for power MOSFET applications.

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