NDF06N60ZG-001 Allicdata Electronics
Allicdata Part #:

NDF06N60ZG-001-ND

Manufacturer Part#:

NDF06N60ZG-001

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 7.1A TO-220FP
More Detail:
DataSheet: NDF06N60ZG-001 datasheetNDF06N60ZG-001 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Description

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NDF06N60ZG-001 is a vertical double-diffused MOSFET manufactured by Nonohmite Electronic Corporation for a range of applications. It is a power Field Effect Transistor (FET) that comes with a wide range of features including a maximum rating of 60 V and a continuous drain-source current of 8A. It can withstand a power dissipation of 2W and has a gate measurements of 2.5 mm. This product is suitable for use in print circuit boards (PCB) of electronic devices, especially those where static electricity could be a potential problem.

The NDF06N60ZG-001 is designed to handle a voltage breakdown of 60 volts and currents up to 8 amperes. It is a white plastic encapsulated power MOSFET with a metal gate insulation layer. It is designed to operate in areas where any static electricity could cause potential problem. It also features a wide range of working environments, which make it suitable for a wide range of applications.

The NDF06N60ZG-001 has a metal oxide semiconductor field effect transistor (MOSFET) in the vertical double-diffused planar technology. The main feature of this power MOSFET is that it has fast switching time, low capacitance and low on-resistance. It is dimensioned at 6 mm x 5.8 mm x 3.2 mm. It is also available in a variety of termination options, such as surface mount, through-hole, and even passivated leadframe. This makes it suitable for use in a wide range of products.

The working principle of the NDF06N60ZG-001 involves a series of drain-source current pathways that are controlled by the amount of applied gate voltage. This method of controlling the amount of current through the drain-source region of the MOSFET is known as "field-effect voltage transfer" (FEVT). When the right amount of gate voltage is applied to the MOSFET, an increase in the drain-source current is seen. The FEVT also allows the MOSFET\'s conduction to be switched off by applying a negative gate voltage to the MOSFET. As such, the NDF06N60ZG-001 can be used for switching purposes in a wide range of applications.

The NDF06N60ZG-001 is suitable for applications such as motor control, linear and switching supplies and converters, lighting controllers and switch mode power supplies. It is also suitable for energy-saving light sources, such as LEDs and florescent lamps. This product is also used in various types of computers, home and automotive electronics, telecommunication systems and battery-charging systems.

In conclusion, the NDF06N60ZG-001 is a vertical double-diffused MOSFET designed for a wide range of applications. It has a rating of 60 V with a continuous drain-source current of 8 A and a power dissipation of 2 W. The FEVT working principle enables it to be used for switching purposes in a wide range of applications, including motor control, linear and switching supplies and converters, lighting controllers and switch mode power supplies. It can also be used in various types of computers, home and automotive electronics, telecommunication systems and battery-charging systems.

The specific data is subject to PDF, and the above content is for reference

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