NJVMJB41CT4G Discrete Semiconductor Products |
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Allicdata Part #: | NJVMJB41CT4GOSTR-ND |
Manufacturer Part#: |
NJVMJB41CT4G |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 6A D2PAK-3 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 6A 3MHz 2W Surfa... |
DataSheet: | NJVMJB41CT4G Datasheet/PDF |
Quantity: | 800 |
800 +: | $ 0.45624 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 600mA, 6A |
Current - Collector Cutoff (Max): | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 3A, 4V |
Power - Max: | 2W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK-3 |
Base Part Number: | MJB41 |
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NJVMJB41CT4G is a single bipolar junction transistor (BJT) that can be used for various applications. This device is manufactured by several companies, so its exact specifications may vary. Generally speaking, the NJVMJB41CT4G is a P-channel JFET with an active region doping. It has a breakdown voltage of 40V, a current gain (hfe) of 40, an fT of 45Mhz, a Gat of 0.2mA/V, and a power dissipation of some 20W. This means that it is suitable for use as a switch or for general purpose current and voltage regulation.
In terms of its working principle, the NJVMJB41CT4G uses the same operating principles as other types of transistors. As a P-channel device, it consists of three leads - the source, gate, and drain - and is activated by controlling the voltage at the gate terminal. When the voltage at the gate terminal is low, current flowing through the device is blocked. However, when the voltage at the gate terminal rises, a current flow is induced, allowing current to pass through the device.
A primary application of the NJVMJB41CT4G is amplifiers. This type of device has an excellent frequency response, making it ideal for use as a preamplifier or as part of a larger amplifier. It can also be used as a switch, and due to its low power consumption, is suitable for use with solar cells. Another common application is power regulation, as the device can be used to control the voltage or current of a circuit.
The NJVMJB41CT4G also has several advantages over other types of transistors, such as being much smaller in size and requiring significantly less power. Additionally, its robust construction and design make it suitable for use in harsh environments or applications that require long-term reliability. This device is also relatively cheap, meaning it can be used for a variety of tasks at much lower cost than more expensive alternatives.
In conclusion, the NJVMJB41CT4G is a single bipolar junction transistor (BJT) that is used for various applications, from amplifiers to power regulation. It is known for its excellent frequency response, small size, low power consumption, robust construction,and affordability. This device is also suitable for use in harsh environments and can provide reliable performance over long periods, making it a popular choice for all sorts of applications.
The specific data is subject to PDF, and the above content is for reference
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