Allicdata Part #: | NJVMJD210T4G-ND |
Manufacturer Part#: |
NJVMJD210T4G |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 25V 5A DPAK-4 |
More Detail: | Bipolar (BJT) Transistor PNP 25V 5A 65MHz 1.4W Sur... |
DataSheet: | NJVMJD210T4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.18109 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 5A |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 1.8V @ 1A, 5A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 45 @ 2A, 1V |
Power - Max: | 1.4W |
Frequency - Transition: | 65MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
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Abbreviated as BJT, bipolar junction transistors are widely used in many electronic devices and applications. NJVMJD210T4G is a type of single bipolar junction transistor (BJT). This device combines and implements the basic functions of switching, amplification, and voltage regulation.
These single-transistor devices are divided into two groups: n-type and p-type. The NJVMJD210T4G is a n-channel device, which means it contains two layers of semiconductor material – one with a positive doped diffusion for the emitter and one with a negative doped diffusion for the collector.
The base of this device is the PN junction, which is located between the emitter and the collector. The current flow of the device is regulated by an applied signal voltage across the PN junction.
Applications of the NJVMJD210T4G include signal switching, signal amplification and signal conditioning. The device can be used to construct amplifier circuits and can be used to provide gain between the input and output elements. It can also be used to provide a control signal to other devices, such as an LED.
NJVMJD210T4G\'s working principle is relatively simple. When a specific voltage is applied between the base and the emitter, it creates a voltage drop through the PN junction. This voltage drop will cause current to flow from the emitter to the collector, thus switching on the device. The amount of current that flows from the collector will depend on the voltage applied between the base and the emitter.
The BJT switching circuit is usually made up of two transistors, one with an N-channel and one with a P-channel. An N-channel device is used to switch on the voltage applied between the base and the emitter while a P-channel device is used to switch it off. This type of switching circuit is often referred to as a negative feedback loop.
NJVMJD210T4G has many advantages over other types of transistor devices. It has a wide range of operating temperatures and is relatively robust. It is low cost, reliable and can be used in a variety of circuits. Additionally, it is easy to assemble and requires minimal maintenance.
In conclusion, NJVMJD210T4G is a single bipolar junction transistor (BJT) that is capable of switching, amplifying and voltage regulating. It is low cost, reliable and has a wide operating temperature range. It is suitable for a variety of applications including signal switching, signal amplification and signal conditioning.
The specific data is subject to PDF, and the above content is for reference
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