NJVMJD340T4G-VF01 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	300V
Vce Saturation (Max) @ Ib, Ic:	1V @ 10mA, 100mA
Current - Collector Cutoff (Max):	100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 50mA, 10V
Power - Max:	1.56W
Frequency - Transition:	10MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Base Part Number:	MJD340

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Introduction

The NJVMJD340T4G-VF01 is a single bipolar junction transistor (BJT) device. This type of device is made up of two junctions and three layers. It is basically an electrically controlled switch that can open or close according to applied voltage. This type of device has been used in many applications like signal amplification, audio and radio frequency applications, logic level translation, power amplifiers, and multiplexers. This article will discuss the application and working principles of the NJVMJD340T4G-VF01.

Application

The NJVMJD340T4G-VF01 is used in a variety of applications. It can be used in power supplies and motor control circuits, signal amplifiers, switching circuits, and audio and RF systems. The device is also used in logic level translation, multiplexers and even in radiation detection detectors.This type of BJT device is available in both single and dual versions. The dual version consists of two junctions, two base collectors and two emitter leads. This configuration is used in logic level conversion and in circuit applications where simultaneous power amplification of two signals is needed. In power amplifiers and switching circuits the NJVMJD340T4G-VF01 can be operated in either common emitter (CE) or common base (CB) configurations. Common emitter configuration is used when high gain, low distortion and high linearity are highlighted. Common base configuration is used when low noise is emphasized.In audio and radio frequency applications the NJVMJD340T4G-VF01 is used for signal amplification. The device is used for voltage regulation, signal processing, radio receivers and even home theatre systems. In logic level conversion applications the device is used for level shifting in analog-to-digital converters or in digital-to-analog converters.

Working Principle

Bipolar junction transistors (BJT) are three terminal devices. They are composed of two p-n junctions between two terminals and one terminal. The two junctions are known as the emitter-base junction and the collector-base junction. The two junction together form a single device.The BJT works as a switch or amplifier. It can open or close depending on the bias voltage or current applied to the base. If a positive voltage is applied to the base, the transistor turns on and the collector current increases. If the voltage is negative, the transistor turns off and the collector current decreases. This is known as the cut-off region.The current gain of a BJT is determined by the ratio of the collector current to the base current. This is known as the beta of the BJT. It is usually specified in terms of the ratio hFE. The higher the hFE, the larger the current gain. The NJVMJD340T4G-VF01 is a voltage operated device and its operation is based on the difference between the collector-emitter voltage and the base-emitter voltage. The base-emitter voltage needs to be greater than the collector-emitter voltage in order for the transistor to turn on. This difference is known as the forward-biased condition and it usually determines the amount of current gain of the Bipolar Junction Transistor.

Conclusion

The NJVMJD340T4G-VF01 is a single bipolar junction transistor device. It is used in a variety of applications including signal amplification, audio and RF systems, logic level conversion, power amplifiers, and multiplexers. It is available in both single and dual versions. The device works based on the difference between the base-emitter voltage and the collector-emitter voltage. The base-emitter voltage needs to be greater than the collector-emitter voltage for the device to turn on. The higher the hFE, the larger the current gain. This BJT is suitable for many applications where high voltage and signal amplification are needed.

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