Allicdata Part #: | NJVMJD31T4G-ND |
Manufacturer Part#: |
NJVMJD31T4G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 40V 3A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 40V 3A 3MHz 1.56W Sur... |
DataSheet: | NJVMJD31T4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.15826 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
Power - Max: | 1.56W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
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Transistors can be divided into two main categories : bipolar, and field effect systems. In bipolar transistors, a current entering the base is amplified and then exits the collector. The NJVMJD31T4G is a type of bipolar junction transistor, more specifically single. It is used to amplify electrical signals and, due to its high switching speeds, is great for applications such as radio-frequency (RF) amplification, computer logic circuitry and driving heavy loads.
NJVMJD31T4G Application Fields
The NJVMJD31T4G has numerous applications. It is most commonly used as a radio-frequency (RF) amplifier and in computer logic circuitry. However, its applications are far from limited to these two uses. The NJVMJD31T4G can also be used to drive heavy loads, act as a power amplifier, as well as a digital switch for analog circuits. It also finds many practical applications in home security systems, digital power supplies and electronic device interfaces.
NJVMJD31T4G Working Principle
The NJVMJD31T4G is composed of three layers. Each contains a single semiconductor material and is separated by an insulating layer. The base region, where the amplifier’s current is first generated, features an oxide layer between the two semiconductors. This oxide layer, or junction, gives the NJVMJD31T4G its bipolar characteristics. After the primary current enters the base, the secondary current drives out of the collector via the emitter.
The NJVMJD31T4G is primarily driven by voltage differentials between the base and collector layers. In other words, when voltage is applied to the base, a charge is created by the resulting electric field, forming a cloud of electrons that then travel to the collector. This is the NJVMJD31T4G’s basic working principle.
Conclusion
The NJVMJD31T4G is one of the most popular transistor amplifiers available. It is highly efficient, relatively inexpensive and suitable for a wide range of applications. It is composed of three layers and is driven by voltage differentials between the base and collector. Its applications are diverse and include radio-frequency (RF) amplification, computer logic circuitry, driving heavy loads, digital switching and many more.
The specific data is subject to PDF, and the above content is for reference
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