NJVMJD3055T4G Discrete Semiconductor Products |
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Allicdata Part #: | NJVMJD3055T4GOSTR-ND |
Manufacturer Part#: |
NJVMJD3055T4G |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 10A DPAK-4 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 10A 2MHz 1.75W Su... |
DataSheet: | NJVMJD3055T4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.27061 |
5000 +: | $ 0.25772 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 8V @ 3.3A, 10A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | 2MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors - Bipolar (BJT) - Single
NJVMJD3055T4G is a transistor with BJT-type single. It has three terminals: the base, collector and emitter. It has a large current gain with a small voltage drop. The application of NJVMJD3055T4G transistors can include a wide range of electronic devices, such as amplifiers, switches, voltage regulators, and so on.
NJVMJD3055T4G Features
NJVMJD3055T4G are highly reliable and feature low power loss, high frequency stability and high temperature drift rate. Additionally, it has high frequency response and high robustness against thermal stress and static electricity.
NJVMJD3055T4G Working Principle
In BJT transistors, the working principle is based on the injection of electrons from the emitter to the base through a p-n junction. The electrons enter into the base and are swept towards the collector. This process is dependent on the applied voltage, where the electrons are injected into the base when a positive base-emitter voltage is applied. The amount of the injected current determines the collector current. Also, the resistance of the base-emitter junction determines the current gain of the transistor, and the base-collector junction determines the output current.
NJVMJD3055T4G Common Applications
NJVMJD3055T4G transistors are used in both digital and analog electronic equipment. The most common application of NJVMJD3055T4G transistors is in the power supply circuit, where they are used as switching devices. Additionally, they can be used in amplifiers and switching circuits, providing high levels of power and current. Furthermore, they can be found in the control circuits of medical equipment, due to their ability to control high power signals accurately. Additionally, NJVMJD3055T4G transistors can be used in solar array inverters, motor controllers, and power supplies.
Conclusion
NJVMJD3055T4G transistors have a wide range of applications and uses, especially in power supply circuits, due to their high current gain, low voltage drop and robustness against electrical and thermal stress. Their working principle is based on the injection of electrons into the base to control the collector current. Furthermore, they are widely used in medical equipment and solar array inverters.
The specific data is subject to PDF, and the above content is for reference
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