NJVMJD3055T4G Allicdata Electronics

NJVMJD3055T4G Discrete Semiconductor Products

Allicdata Part #:

NJVMJD3055T4GOSTR-ND

Manufacturer Part#:

NJVMJD3055T4G

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 10A DPAK-4
More Detail: Bipolar (BJT) Transistor NPN 60V 10A 2MHz 1.75W Su...
DataSheet: NJVMJD3055T4G datasheetNJVMJD3055T4G Datasheet/PDF
Quantity: 1000
2500 +: $ 0.27061
5000 +: $ 0.25772
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 1.75W
Frequency - Transition: 2MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Description

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Transistors - Bipolar (BJT) - Single

NJVMJD3055T4G is a transistor with BJT-type single. It has three terminals: the base, collector and emitter. It has a large current gain with a small voltage drop. The application of NJVMJD3055T4G transistors can include a wide range of electronic devices, such as amplifiers, switches, voltage regulators, and so on.

NJVMJD3055T4G Features

NJVMJD3055T4G are highly reliable and feature low power loss, high frequency stability and high temperature drift rate. Additionally, it has high frequency response and high robustness against thermal stress and static electricity.

NJVMJD3055T4G Working Principle

In BJT transistors, the working principle is based on the injection of electrons from the emitter to the base through a p-n junction. The electrons enter into the base and are swept towards the collector. This process is dependent on the applied voltage, where the electrons are injected into the base when a positive base-emitter voltage is applied. The amount of the injected current determines the collector current. Also, the resistance of the base-emitter junction determines the current gain of the transistor, and the base-collector junction determines the output current.

NJVMJD3055T4G Common Applications

NJVMJD3055T4G transistors are used in both digital and analog electronic equipment. The most common application of NJVMJD3055T4G transistors is in the power supply circuit, where they are used as switching devices. Additionally, they can be used in amplifiers and switching circuits, providing high levels of power and current. Furthermore, they can be found in the control circuits of medical equipment, due to their ability to control high power signals accurately. Additionally, NJVMJD3055T4G transistors can be used in solar array inverters, motor controllers, and power supplies.

Conclusion

NJVMJD3055T4G transistors have a wide range of applications and uses, especially in power supply circuits, due to their high current gain, low voltage drop and robustness against electrical and thermal stress. Their working principle is based on the injection of electrons into the base to control the collector current. Furthermore, they are widely used in medical equipment and solar array inverters.

The specific data is subject to PDF, and the above content is for reference

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