NJVMJD44H11RLG-VF01 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1V @ 400mA, 8A
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 4A, 1V
Power - Max:	1.75W
Frequency - Transition:	85MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Base Part Number:	MJD44H11

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Introduction

The NJVMJD44H11RLG-VF01 transistor is a single bipolar junction transistor (BJT) which provides an excellent level of integration for high-speed, high-power circuits. This device is typically used in various applications such as optical communication, power management, and military/aerospace. It also has a range of working voltages from 25V to 40V which allows the transistor to be used in multiple applications.

Application Field

The NJVMJD44H11RLG-VF01 transistor is a high power, high speed, integrated single bipolar junction transistor (BJT). This device has a range of working voltages ranging from 25V to 40V. As such, it is suitable for a variety of applications including:

• Optical communication circuits - NJVMJD44H11RLG-VF01 is well suited for high-speed data transfer in optical communication systems. Its high-speed performance and wide range of voltages make it ideally suited for this type of application.
• Power Management - The wide range of voltages available on the NJVMJD44H11RLG-VF01 makes it suitable for use in power management systems. Its high power performance and wide voltage range enable efficient power conversion and management solutions.
• Military and Aerospace - The NJVMJD44H11RLG-VF01 can be used for military and aerospace applications due to its high power and high speed performance. Its wide range of voltages allows for flexibility in application design.

Working Principle

The NJVMJD44H11RLG-VF01 is a single bipolar junction transistor (BJT) which uses the n-type semiconductor junction as one of the main components of the transistor. The n-type semiconductor is formed by doping one side of the material with electrons, while the other side is doped with holes. This junction is surrounded by two metal contacts, a base and an emitter. When a small current is applied to the base of the transistor, a larger current will be allowed to flow between the emitter and collector. This is known as a current amplifier due to the fact that a small current is amplified to a larger one.The working principle of the NJVMJD44H11RLG-VF01 transistor is the same as other bipolar transistors, with an electron current passing from the emitter to the collector when a gate voltage is applied. This results in a voltage-controlled current gain, allowing for amplification of signals by fluctuating the gate voltage. The NJVMJD44H11RLG-VF01 can also be used as a switch when the gate voltage is cut off, allowing or disallowing current flow. The wide range of working voltages available on this device, allow it to be used in a variety of applications, making it highly versatile and valuable in many engineering fields.

Conclusion

The NJVMJD44H11RLG-VF01 transistor is a high performance, high-speed single bipolar junction transistor (BJT) which provides excellent integration for various applications. Its wide range of working voltages and fast switching time allows it to be used in optical communication, power management, and military/aerospace applications. The working principle of the NJVMJD44H11RLG-VF01 transistor is the same as other bipolar transistors, providing an efficient current gain when a gate voltage is applied. Its high speed and wide range of voltages make the NJVMJD44H11RLG-VF01 an excellent solution for a variety of engineering needs.

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