NJVMJD2955T4G Discrete Semiconductor Products |
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Allicdata Part #: | NJVMJD2955T4GOSTR-ND |
Manufacturer Part#: |
NJVMJD2955T4G |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 60V 10A DPAK-4 |
More Detail: | Bipolar (BJT) Transistor PNP 60V 10A 2MHz 1.75W Su... |
DataSheet: | NJVMJD2955T4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.13555 |
5000 +: | $ 0.12680 |
12500 +: | $ 0.11806 |
25000 +: | $ 0.11660 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 8V @ 3.3A, 10A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | 2MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD2955 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NJVMJD2955T4G is a high voltage, high current single bipolar transistor (BJT). It is used for applications such as high current switching, level shifting, linear amplifiers and motor control. This transistor is available in a variety of configurations, including a single in-line, dual-in-line, through-hole, surface-mount and flat-pack packages.
This transistor has three pins, the collector (C), base (B), and emitter (E). The transistor works by having majority carriers (electrons) move from the emitter to the collector when it is turned on. This is due to the base-emitter junction being forward biased. This in turn allows electrons to flow from the emitter to the collector, creating a current flow.
The collector terminal of the transistor has two functions, the first being to provide the necessary current for operation. The second function is to collect the electrons that are released from the emitter after the voltage across it reaches a certain level. This causes the transistor to turn off.
The base pin of the transistor is used to control the amount of current flowing between the collector and emitter. This is done by varying the voltage applied to the base. When the voltage across the base is increased, the transistor\'s current gain will increase, allowing more electrons to flow from the emitter to the collector. Conversely, when the voltage across the base is decreased, the current gain decreases and the electrons will not flow as freely.
The NJVMJD2955T4G is well suited for switching applications, such as relays, solenoids and contactors. It is also suitable for use in a variety of linear amplifier circuits, including amplifiers that require high current output and low input levels. This transistor is also used in motor control circuits, such as those used in electric scooters. Overall, the performance of this transistor makes it well suited for a wide range of applications.
In conclusion, the NJVMJD2955T4G is a high voltage, high current single bipolar transistor. It is used for applications such as high current switching, level shifting, linear amplifiers and motor control. The transistor works by allowing majority carriers (electrons) to move from the emitter to the collector when it is turned on. The collector terminal of the transistor provides the necessary current for operation and collects the electrons released from the emitter, while the base is used to control the amount of current flowing between the collector and emitter. Ultimately, the performance of the NJVMJD2955T4G its makes it well suited for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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