Allicdata Part #: | NJVMJD112G-ND |
Manufacturer Part#: |
NJVMJD112G |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 100V 2A DPAK-4 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 2A ... |
DataSheet: | NJVMJD112G Datasheet/PDF |
Quantity: | 1000 |
825 +: | $ 0.24740 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 40mA, 4A |
Current - Collector Cutoff (Max): | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 2A, 3V |
Power - Max: | 1.75W |
Frequency - Transition: | 25MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
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A NJVMJD112G single bipolar junction transistor (BJT) consists of two terminals that are connected to three layers of semiconductor material. In the most commonly used BJTs, the parameters of the emitter, collector, and base terminals are fixed. The emitter–base junction is forward-biased with respect to the collector–base junction. When a small current is passed through the collector–base junction, the current is amplified through the emitter–base junction and flows out of the emitter.
The NJVMJD112G single bipolar junction transistor is primarily used in amplifying signals and switching applications. Its most common use is as a transistor switch, in which two inputs are combined to yield a single output. This arrangement enables the transistor to turn on or off one signal in response to a change in the other input voltage. For example, a voltage signal with a low voltage level turning on the switch, and a higher voltage level turning it off.
NJVMJD112G single bipolar junction transistors are also commonly used in audio amplifiers and digital logic circuits. In audio amplifiers, they are used to provide voltage gain, converting a low-level input signal into a higher output signal level. In digital logic circuits, they help to shape the logic states of a digital signal, converting a logic-level “1” into a logic-level “0”, for example. They are also able to provide fast switching speeds in both analog and digital circuits.
The working principle of the NJVMJD112G single bipolar junction transistor is based on the phenomenon of negative resistance. When a small current is passed through the collector-base junction, the transistor\'s base-emitter junction begins to act as a negative resistance. This negative resistance reduces the current through the collector-base junction and increases the current through the emitter-base junction. As a result, the collector current is larger than the base current, which is known as current gain.
The base-emitter junction of the NJVMJD112G single bipolar junction transistor acts like a diode, allowing current to pass in one direction and blocking current in the other direction. The collector-base junction acts as a resistor, controlling the amount of current that can pass through the transistor. As the base current is increased, the collector current is increased due to the increased current gain, resulting in an amplified output signal.
In summary, the NJVMJD112G single bipolar junction transistor is an extremely versatile device, with applications in a wide range of circuits, including switching, amplification, and digital logic. Its working principle is based on the phenomena of negative resistance and diode-like behavior, allowing the transistor to convert a low input signal into a more amplified output signal.
The specific data is subject to PDF, and the above content is for reference
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