Allicdata Part #: | NJVMJD44E3T4G-ND |
Manufacturer Part#: |
NJVMJD44E3T4G |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 80V 10A DPAK-4 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 80V 10A ... |
DataSheet: | NJVMJD44E3T4G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.23310 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 10A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 20mA, 10A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 5A, 5V |
Power - Max: | 1.75W |
Frequency - Transition: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
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Transistors - Bipolar (BJT) - Single
NJVMJD44E3T4G is a single Bipolar Junction Transistor (BJT). A BJT is a type of semiconductor device that operates as an electronic switch when connected to an external circuit. Unlike a MOSFET, it controls the current between two terminals, the collector and the emitter, by applying a current to the base terminal. NJVMJD44E3T4G is a low-power BJT with a low voltage drop, making it suitable for applications that require low power consumption and high performance.
NJVMJD44E3T4G Application Field
NJVMJD44E3T4G is suitable for applications such as light-duty switching, signal amplification, radio frequency (RF) devices, and power supply circuits, as well as pulse generator circuits, interface circuits, and power transistor applications. It is also commonly used in low noise circuits, current amplifiers, chopper circuits, and switching regulators.
NJVMJD44E3T4G Working Principle
NJVMJD44E3T4G is a type of BJT which has three terminals connected to it, namely the collector terminal, base terminal, and the emitter terminal. It works on the principle of controlling current flow through the device. The current flows between the collector and emitter terminals, when the base-emitter junction is forward-biased. Current enters the base of the BJT and is amplified by the BJT, allowing it to pass through with more current. When the base-emitter junction is reverse biased, no current flows through the device. Thus by controlling the flow of current through the transistor, one can control the amount of current flow in the circuit.
Conclusion
NJVMJD44E3T4G is a single Bipolar Junction Transistor (BJT). It is suitable for applications that require low power consumption and high performance, such as light-duty switching, signal amplification, RF devices, and power supply circuits. It works on the principle of controlling current flow through the device by controlling the flow of current through the transistor. Thus, NJVMJD44E3T4G is a great option for circuits requiring low noise, current amplifiers, chopper circuits, and switching regulators.
The specific data is subject to PDF, and the above content is for reference
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