Allicdata Part #: | NJVMJD31CRLG-ND |
Manufacturer Part#: |
NJVMJD31CRLG |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 100V 3A DPAK-4 |
More Detail: | Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Su... |
DataSheet: | NJVMJD31CRLG Datasheet/PDF |
Quantity: | 1000 |
1800 +: | $ 0.17464 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 1.2V @ 375mA, 3A |
Current - Collector Cutoff (Max): | 50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 3A, 4V |
Power - Max: | 1.56W |
Frequency - Transition: | 3MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
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Transistors are electronic components that are used in electronic circuits to control a current or a voltage. Bipolar Junction Transistors (BJTs) are the most common type of transistors. NJVMJD31CRLG is a single BJT that has a high current gain, low voltage capability and excellent temperature stability.
A BJT consists of three regions, the base, collector and emitter. The base is located between the two other regions. It is used to control the current flow from the collector to the emitter. Usually, the collector has a higher voltage than the emitter, and the base region has a small voltage drop. The application field for the NJVMJD31CRLG includes power switching, audio power amplifiers and low noise amplification.
The working principle of the NJVMJD31CRLG is based on the control of electron flow in a semiconductor. Electrons in the base region of the BJT are able to flow in both directions. However, due to the junction between the base and collector, the current flow is mainly in one direction. This directional flow is observed when a current is passed through the base region. As the current increases, the voltage drop across the collector decreases, effectively controlling the current. This is known as transistor action.
The NJVMJD31CRLG has a wide temperature range and is capable of operating from -40°C to +85°C. Additionally, it has a maximum Vce rating of 40V and a maximum Ic rating of 500mA. The high current gain of the device ensures that it can handle high-power switching applications and is suitable for use in audio power amplifiers. The low voltage capability makes it suitable for low noise amplification applications.
The NJVMJD31CRLG is a single BJT transistor with a wide range of applications. It has a high current gain, low voltage capability and excellent temperature stability. The working principle of the device is based on the control of electron flow in a semiconductor. The device is capable of operating from a temperature range of -40°C to +85°C, and has a maximum Vce rating of 40V and a maximum Ic rating of 500mA. The NJVMJD31CRLG can be used in power switching, audio power amplifiers, and low noise amplification applications.
The specific data is subject to PDF, and the above content is for reference
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