NJVMJD32CG Allicdata Electronics
Allicdata Part #:

NJVMJD32CG-ND

Manufacturer Part#:

NJVMJD32CG

Price: $ 0.46
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 100V 3A DPAK-4
More Detail: Bipolar (BJT) Transistor PNP 100V 3A 3MHz 1.56W Su...
DataSheet: NJVMJD32CG datasheetNJVMJD32CG Datasheet/PDF
Quantity: 945
1 +: $ 0.40950
10 +: $ 0.36036
100 +: $ 0.27613
500 +: $ 0.21830
1000 +: $ 0.17464
Stock 945Can Ship Immediately
$ 0.46
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Power - Max: 1.56W
Frequency - Transition: 3MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Base Part Number: MJD32
Description

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Introduction to NJVMJD32CG

NJVMJD32CG is a single bipolar junction transistor (BJT) consisting of three terminals: a base (B), an emitter (E) and a collector (c). The device can be used in many different applications due to its high current gain and low saturation voltage. This article will explain the NJVMJD32CG application field and working principle.

Application Field of NJVMJD32CG

NJVMJD32CG can be used in a variety of different applications such as amplifying applications, switching applications, drivers, and oscillators. It is also used in switching regulators, logic circuits, line switchers and amplifiers. The device can also be used in power supplies and high-speed amplifiers and oscillators.

Working Principle of NJVMJD32CG

NJVMJD32CG functions through the interaction between electrons and holes that are generated in the junction between the base and the emitter. The base is a very thin layer of semiconductor material which has a high concentration of electrons, which is why it is called n-type semiconductor. The emitter is doped with impurities and has a high concentration of holes, which is why it is called p-type semiconductor. Since the n-type material and the p-type material are next to each other, electrons from the n-type material can easily flow into the p-type material. When the collector current is applied, the electrons from the n-type material will flow into the p-type material and then into the collector, while the holes from the p-type material will flow into the n-type material and then into the emitter, forming a current gain. This is what allows the device to produce a larger output, making it more useful in applications such as amplifying and switching.

Conclusion

In conclusion, NJVMJD32CG is a single bipolar junction transistor that is ideal for use in many different applications due to its high current gain and low saturation voltage. It operates through the interaction between electrons and holes generated in the junction, allowing it to produce a larger output. Therefore, the device can be used in amplifying, switching, driver and oscillator applications.

The specific data is subject to PDF, and the above content is for reference

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