NJVMJD122T4G-VF01 Discrete Semiconductor Products |
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Allicdata Part #: | NJVMJD122T4G-VF01OSTR-ND |
Manufacturer Part#: |
NJVMJD122T4G-VF01 |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 100V 8A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 8A ... |
DataSheet: | NJVMJD122T4G-VF01 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.17265 |
5000 +: | $ 0.16075 |
12500 +: | $ 0.15876 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 4V @ 8A, 80mA |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 4A, 4V |
Power - Max: | 1.75W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD122 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
NJVMJD122T4G-VF01 transistors are popular bipolar junction transistors (BJT) commonly used in both industrial and consumer appliances. This single transistor is comprised of two independent PNP and NPN transistors within the same package, providing a variety of functions in numerous applications. It is commonly used as a low-power amplifier, voltage regulator, and a motor control. Motorola has used it for several years in their popular universal motor designs.
The NJVMJD122T4G-VF01 Package Dual Transistor is designed for use in low- or medium-power amplification and other general purpose transistor applications. It has an Internal Base-Emitter Voltage of 7.0 Volts and an Internal Collector-Emitter Saturation Voltage of 0.1 Volts, which makes it particularly useful for low-power operation. The transistor is capable of withstanding up to 10 Volts of collector-base voltage and can dissipate as much as 100 mW of continuous collector power. Additionally, the transistor features built in ESD protection, making it suitable for use in dynamic environments.
The working principle of the NJVMJD122T4G-VF01 transistor is based on the principle of transistor action. The arrangement of the transistor consists of three layers known as emitter, base, and collector. An NPN transistor has the emitter connected to negatively charged electrons and the collector connected to positively charged electrons. When a voltage is applied to the base, electrons located in the emitter are attracted to the base, while simultaneously attracting electrons from the collector. This in turn creates a current, allowing the transistor to act as an amplifier.
The NJVMJD122T4G-VF01 is an extremely versatile single transistor, as it can be found in devices such as amplifiers, voltage regulators, motor controllers, and more. These transistors are very reliable and have excellent stability, making them perfect for use in a broad range of applications. As far as applications go, the NJVMJD122T4G-VF01 transistor can be used in anything from consumer electronics to industrial systems, with its features and reliability making it perfect for low- and medium-power applications.
Overall, the NJVMJD122T4G-VF01 Package Dual Transistor is a reliable and efficient single transistor, suitable for a variety of applications. Its internal base-emitter voltage of 7.0 volts, collector-emitter saturation voltage of 0.1 volts, and its 10 volts collector-base voltage withstand makes it a long lasting and durable transistor, ideal for use in low- and medium-power applications in consumer, industrial, and medical products. The working principle of this transistor is based on the principle of transistor action, making it easy to use and understand in both small and large-scale applications.
The specific data is subject to PDF, and the above content is for reference
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