NJVMJD350T4G Discrete Semiconductor Products |
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Allicdata Part #: | NJVMJD350T4GOSTR-ND |
Manufacturer Part#: |
NJVMJD350T4G |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 300V 0.5A DPAK-4 |
More Detail: | Bipolar (BJT) Transistor PNP 300V 500mA 10MHz 1.56... |
DataSheet: | NJVMJD350T4G Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.16594 |
5000 +: | $ 0.15450 |
12500 +: | $ 0.15259 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 50mA, 10V |
Power - Max: | 1.56W |
Frequency - Transition: | 10MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Base Part Number: | MJD350 |
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NJVMJD350T4G transistors are small signal NPN devices designed for general purpose applications. They feature low voltage drop-off, high current gain and excellent thermal stability. These devices are designed to provide higher power output than equivalent devices in a smaller package. The transistors are designed for use in applications such as amplifiers and automotive electronics, where low voltage drop-off and high current gain are essential.
The NJVMJD350T4G is a bipolar junction transistor (BJT) device. BJTs are three-terminal semiconductor devices consisting of an emitter, collector, and base, and are classified as either NPN or PNP depending on the relative doping of the emitter and collector regions. The emitter and collector regions of an NPN BJT are positively doped, while the base is negatively doped. An NPN device will usually have an extremely low base-emitter voltage, and therefore provide high current gain.
The NJVMJD350T4G is a single BJT transistor, meaning that it has only one base-emitter junction and one base-collector junction. It is also a low-voltage device, meaning that it is designed to operate at a voltage of 350V or less. The device provides excellent thermal stability and high current gain, making it ideal for applications requiring a high level of performance.
The NJVMJD350T4G transistor is typically used in applications that require large power output in a small package. In amplifiers, it can be used to provide high current gain and low noise operation. It is also used in automotive electronics, where it can provide reliable and efficient power output. The device can also be used in power supply applications for providing low voltage drop-off.
The NJVM350T4G is a versatile device that provides excellent thermal stability and high current gain in a small package. It is well-suited for applications such as amplifiers and automotive electronics, where high current gain and low voltage drop-off are essential. The device is also well-suited for power supply applications, where it can provide reliable and efficient power output.
The specific data is subject to PDF, and the above content is for reference
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