NJVMJD45H11RLG-VF01

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	8A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	1V @ 400mA, 8A
Current - Collector Cutoff (Max):	1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 4A, 1V
Power - Max:	1.75W
Frequency - Transition:	90MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Base Part Number:	MJD45H11

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Transistors - Bipolar (BJT) - Single

NJVMJD45H11RLG-VF01 is a single bipolar junction transistor (BJT) specialized for high-frequency low voltage switching applications, such as in digital circuits. This type of BJT, constructed using a NPN structure with a collector-emitter breakdown voltage of 40V, can handle currents up to 200mA. These characteristics make it suitable for wide variety of system designs, such as amplifiers, power circuits, and signal switching circuits.

NJVMJD45H11RLG-VF01 is composed of a single layer of N-type semiconducting material, with an attached P-type base layer serving as an additional region of controllable current flow. The arrangement of the two regions of a BJT allows it to act as a switch, amplifying electrical signals. BJT transistors are commonly used as amplifiers due to its ability to control the output current by changing the base current. NJVMJD45H11RLG-VF01 transistor is a particularly useful switch due to its high switching frequency and its low on-state resistance.

The switching principle of BJT is largely dependent on the number of electrons in the current that are allowed to flow through the base. When the base is supplied with too few electrons to initiate the current flow, the transistor will remain in the off-state, allowing no current to pass. When the base current is increased, the number of electrons in the current will also increase, and when it reaches a certain value, the transistor will open, thus allowing current to pass through. This threshold current level is called the cut-in voltage, and is determined by the type of BJT and its construction.

NJVMJD45H11RLG-VF01 has a low cut-in voltage of approximately 0.7V and is able to detect and respond to small variations in the input signal quickly, making it well suited for high-frequency switching applications. It also has a low on-state resistance, which reduces the power dissipation associated with the switching process. This low power dissipation ensures that the transistors’ working performance is not degraded over time.

NJVMJD45H11RLG-VF01 is commonly used in digital circuits as an on/off switch, as an amplifier, and as a level shifter. Thanks to its high switching frequency and small size, NJVMJD45H11RLG-VF01 can be used to provide low voltage and low current solutions in RF communications, frequency synthesis, machine control, surveillance and security systems, power conversion and UPS, and other smart sensing and measuring systems.

In summary, NJVMJD45H11RLG-VF01 is a single bipolar junction transistor suitable for high-frequency low voltage switching applications. It has a low cut-in voltage and low on-state resistance, making it suitable for used as an on/off switch, an amplifier, and a level shifter, in a variety of systems.

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