Allicdata Part #: | NSBA143ZF3T5G-ND |
Manufacturer Part#: |
NSBA143ZF3T5G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PREBIAS PNP 254MW SOT1123 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | NSBA143ZF3T5G Datasheet/PDF |
Quantity: | 1000 |
8000 +: | $ 0.06767 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Power - Max: | 254mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-1123 |
Supplier Device Package: | SOT-1123 |
Base Part Number: | NSBA1* |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NSBA143ZF3T5G is a single, pre-biased bipolar junction transistor (BJT). It is widely used in general purpose and switching applications due to its low cost and compact size.
This device features a collector-emitter breakdown voltage of 4.3 V and a current gain of 50. It has a maximum collector-emitter saturation voltage of 350 mV with a current rating of 0.5 A. It has a high-voltage transistor capable of operating as a switch at frequencies up to 100 kHz. The NSBA143ZF3T5G also features a low-power consumption ensuring good efficiency in applications with low power.
The NSBA143ZF3T5G can be used in a wide range of applications including amplifiers, oscillators and switches. They can be found in a variety of industrial and consumer electronics, such as automotive and computer electronics. The devices are also used in data and signal lines, high-voltage switching for power supplies, and power switching for motor control. The device is ideal for low-power applications, due to its low current consumption.
The NSBA143ZF3T5G operates on a working principle known as the bipolar effect. This is the phenomenon of two semiconductor devices being able to transport current or charge between two terminals of a circuit. In the case of this transistor, the collector-emitter region is divided into two regions; a P-type semiconductor and an N-type semiconductor. When a voltage is applied to the base, electrons are drawn away from the emitter terminal and are attracted to the collector terminal. This creates an electric current through the transistor, thus allowing for the transfer of energy or signal.
The NSBA143ZF3T5G offers a number of advantages in comparison to other transistors. Its high-voltage, low-power consumption, and compact size make it ideal for a variety of applications. It is also cost-effective and reliable, making it a popular choice in a variety of industries.
The NSBA143ZF3T5G’s versatile characteristics, along with its low cost and small size makes it a great choice for a range of applications. Its low power consumption and reliability make it an ideal choice for industrial, consumer and automotive electronics. With its versatile features, the NSBA143ZF3T5G is sure to remain an important part of the electronics industry.
The specific data is subject to PDF, and the above content is for reference
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