DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Base Part Number:	NSBA1*
Supplier Device Package:	SOT-563
Package / Case:	SOT-563, SOT-666
Mounting Type:	Surface Mount
Power - Max:	500mW
Frequency - Transition:	--
Current - Collector Cutoff (Max):	500nA
Vce Saturation (Max) @ Ib, Ic:	250mV @ 1mA, 10mA
Series:	--
Resistor - Emitter Base (R2):	47 kOhms
Resistor - Base (R1):	4.7 kOhms
Voltage - Collector Emitter Breakdown (Max):	50V
Current - Collector (Ic) (Max):	100mA
Transistor Type:	2 PNP - Pre-Biased (Dual)
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NSBA143ZDXV6T1G Application Field and Working Principle

Introduction

NSBA143ZDXV6T1G is a pre-biased array of bipolar junction transistors (BJTs) by ON Semiconductor. It is a versatile device that can be used in a variety of applications. This article will discuss its application field and working principle.

Application Field

The NSBA143ZDXV6T1G is a suitable device for use in analogue and mixed signal circuits. The small package size makes it well-suited for use in applications where space is limited. Examples of some of the applications that it can be used in include:

• Switching speed control
• Switch Debouncing
• High-Speed Schmitt Trigger Circuits
• Signal Inversion And Voltage Level Translation
• Logic/Analogue Circuit Interfacing
• Analogue Signal Switching
• Power Management
• Hybrid Analogue/Digital Signal Processing

Working Principle

The working of the NSBA143ZDXV6T1G is based on the working of its constituent cells. Each cell consists of an input transistor, a base cell collector, and a diode. The diode and the base cell collector latch the input signal, providing latching functionality and preventing the signal from bouncing. The NSBA143ZDXV6T1G is designed so that the output current of each cell is equal. This equality allows the device to be used in a number of control applications, such as speed control, voltage level translation, or logic interfacing.

Conclusion

In conclusion, the NSBA143ZDXV6T1G is a versatile pre-biased bipolar junction transistor array that is suitable for a variety of switching, debouncing, and logic/analogue interfacing applications. It works by using the latching properties of its constituent cells to latch a signal, and then providing an equal output current across each cell. This device can be used in applications such as high-speed Schmitt trigger circuits, signal inversion, and power management.

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